Junxue Ran

发表

The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure

Xiaoyan Wang, Xiaoliang Wang, Baozhu Wang, 2008, Microelectron. J..

Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

Jianping Li, Jinmin Li, Xiaoliang Wang, 2008, Microelectron. J..

Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition

Jianping Li, Xiaoyan Wang, Xiaoliang Wang, 2007, Microelectron. J..

Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates

Jianping Li, He Qian, Xiaoliang Wang, 2007, Science in China Series F: Information Sciences.

Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD

Junxi Wang, Jianping Li, Jinmin Li, 2006, Microelectron. J..

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD

Jianping Li, Jinmin Li, Xiaoliang Wang, 2008, Microelectron. J..

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD

Chun Feng, Jinmin Li, Tangsheng Chen, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD

Jinmin Li, Cuimei Wang, Hongling Xiao, 2008 .

Photovoltaic effects in InGaN structures with p–n junctions

Jinmin Li, Cuimei Wang, Hongling Xiao, 2007 .

Simulation of In0.65Ga0.35 N single-junction solar cell

Jinmin Li, Cuimei Wang, Hongling Xiao, 2007 .

Theoretical design and performance of InxGa1−xN two-junction solar cells

Jinmin Li, Cuimei Wang, Hongling Xiao, 2008 .

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

Chun Feng, Jinmin Li, Hongling Xiao, 2009 .

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

Junxi Wang, Jinmin Li, Yiping Zeng, 2007 .