Boris S. Elman

InGaAs/GaAs interdigitated metal-semiconductor-metal (IMSM) photodetectors operational at 1.3 um grown by molecular beam epitaxy

Jagannath Chirravuri, Andrew J. Negri, Boris S. Elman, 1991, Other Conferences.

Low substrate temperature molecular beam epitaxial growth and the critical layer thickness of InGaAs grown on GaAs

Emil S. Koteles, P. Melman, Boris S. Elman, 1991 .

Spatially selective modification of GaAs/AlGaAs quantum wells by SiO2 capping and rapid thermal annealing

Emil S. Koteles, Boris S. Elman, J. Y. Chi, 1989 .

Quantum well shape modification using vacancy generation and rapid thermal annealing

Emil S. Koteles, Craig Armiento, P. Melman, 1991 .