Jacques Boulmer

Realization of Si1-x-yGexCy/Si heterostructures by pulsed-laser-induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)

Keith A. Nugent, C. Clerc, Francois H. Julien, 1995, Photonics West.

Laser doping for microelectronics and microtechnology

Tarik Bourouina, Kuniyuki Kakushima, Elisabeth Dufour-Gergam, 2004, SPIE High-Power Laser Ablation.

Laser-induced structural or compositional modifications of Si or IV-IV surface: planarization, pulsed-laser-induced epitaxy, carbon incorporation, and chemical etching

Alain Bosseboeuf, B. Bourguignon, Jacques Boulmer, 1998, Other Conferences.

Laser Doping for Ultra-Shallow Junctions Monitored by Time Resolved Optical Measurements

Takashi Noguchi, G. Kerrien, Jacques Boulmer, 2002 .

Laser chemical etching of copper films

B. Bourguignon, Jacques Boulmer, D. Debarre, 1995, Photonics West.

Gas immersion laser doping (GILD) for ultra-shallow junction formation

C. Laviron, G. Kerrien, Jacques Boulmer, 2004 .

PULSED LASER ETCHING OF SILICON : DOPANT PROFILE MODIFICATION AND DOPANT DESORPTION INDUCED BY SURFACE MELTING

Jacques Boulmer, J.-B. Ozenne, Bernard Bourguignon, 1994 .