James S. Speck

James S. Speck, Robert A. York, A. S. Nagra, 2000, ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics (IEEE Cat. No.00CH37076).

Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. III. Interfacial defects and domain misorientations

James S. Speck, Alexey E. Romanov, W. Pompe, 1995 .

Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs

En Xia Zhang, Rong Jiang, Xiao Shen, 2017, IEEE Transactions on Nuclear Science.

Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

James S. Speck, Richard J. Molnar, Julia W. P. Hsu, 2002 .

MOCVD growth of AlGaN films for solar blind photodetectors

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 2004 .

Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, Arpan Chakraborty, 2004 .

Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2004 .

Improved growth rates and purity of basic ammonothermal GaN

Shinichiro Kawabata, James S. Speck, Shuji Nakamura, 2014 .

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

James S. Speck, Robert A. York, Umesh K. Mishra, 2004 .

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

James S. Speck, Umesh K. Mishra, Srabanti Chowdhury, 2015 .

Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy

James S. Speck, Pierre Petroff, Feng Wu, 2006 .

Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films

James S. Speck, Umesh K. Mishra, Patrick Waltereit, 2003 .

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

James S. Speck, J. Speck, Yuh-Renn Wu, 2012 .

Optical properties of extended and localized states in m-plane InGaN quantum wells

James S. Speck, Shuji Nakamura, S. P. DenBaars, 2013 .

Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

James S. Speck, J. Speck, N. Young, 2012 .

Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes

James S. Speck, Shuji Nakamura, Robert M. Farrell, 2011 .

High-brightness polarized light-emitting diodes

James S. Speck, Shuji Nakamura, Claude Weisbuch, 2012, Light: Science & Applications.

High gain semiconductor optical amplifier — Laser diode at visible wavelength

James S. Speck, Shuji Nakamura, Tien Khee Ng, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Capture Kinetics of Electron Traps in MBE‐Grown n‐GaN

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2001 .

Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy

James S. Speck, Rajesh D. Rajavel, J. E. Jensen, 2000 .

$f_{T}$ and $f_{\rm MAX}$ of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT

James S. Speck, Umesh K. Mishra, Nidhi, 2009 .

Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes

James S. Speck, Shuji Nakamura, Tien Khee Ng, 2017, 2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR).

Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2004 .

Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202¯1¯) III-nitride laser diodes with chemically assisted ion beam etched facets

James S. Speck, Shuji Nakamura, Robert M. Farrell, 2016 .

Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire

Larry A. Coldren, James S. Speck, M. Hansen, 2000 .

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

James S. Speck, Shuji Nakamura, S. P. DenBaars, 2008 .

Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride

James S. Speck, Evelyn L. Hu, Yan Gao, 2004 .

Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .

Controlled ordering and positioning of InAs self-assembled quantum dots

James S. Speck, Pierre Petroff, P. Petroff, 2000 .

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

James S. Speck, Tsung-Jui Yang, J. Speck, 2014 .

High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates

Mathew C. Schmidt, Christiane Poblenz, James S. Speck, 2010 .

AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2008 .

Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia

James S. Speck, Shuji Nakamura, Feng Wu, 2004 .

Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope

Christiane Poblenz, James S. Speck, Edward T. Yu, 2002 .

Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1995 .

Optical waveguide simulations for the optimization of InGaN-based green laser diodes

Anurag Tyagi, James S. Speck, Shuji Nakamura, 2010 .

Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells

James S. Speck, Patrick Waltereit, S. P. DenBaars, 2004 .

High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes

Shinichi Tanaka, James S. Speck, Shuji Nakamura, 2011 .

Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates

James S. Speck, Shuji Nakamura, Umesh K. Mishra, 2005 .

Impact of proton irradiation on deep level states in n-GaN

En Xia Zhang, Steven A. Ringel, James S. Speck, 2013 .

High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes: Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals

James S. Speck, Claude Weisbuch, Evelyn Hu, 2010 .

Tunable strontium titanate thin films for microwave devices

James S. Speck, Robert A. York, P. J. Hansen, 2001 .

Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication

Sergio Pinna, James S. Speck, Shuji Nakamura, 2020 .

STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN/GAN MULTIPLE QUANTUM WELLS

James S. Speck, Xinru Wu, M. P. Mack, 1998 .

Erratum: “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate” [Appl. Phys. Lett.98, 191903 (2011)]

Anurag Tyagi, James S. Speck, Shuji Nakamura, 2011 .

Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes

James S. Speck, Yong-Seok Choi, Claude Weisbuch, 2011 .

Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures

James S. Speck, Umesh K. Mishra, Stacia Keller, 2003 .

Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments

James S. Speck, Alexey E. Romanov, Charles B. Parker, 1998 .

Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2010 .

Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

James S. Speck, Shuji Nakamura, Makoto Saito, 2008 .

Hydrogen passivation of deep levels in n–GaN

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2000 .

Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

James S. Speck, Umesh K. Mishra, Debdeep Jena, 2002 .

Thin-Film Phase Shifters for Low-Cost Phased Arrays

James S. Speck, Robert A. York, Amit S. Nagra, 2000 .

Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

Christiane Poblenz, James S. Speck, Feng Wu, 2008 .

Self-assembling quantum dot lattices through nucleation site engineering

James S. Speck, David J. Pine, Winston V. Schoenfeld, 2002 .

Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers

James S. Speck, Shuji Nakamura, Alexey E. Romanov, 2012 .

Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well

James S. Speck, Shuji Nakamura, Saulius Marcinkevicius, 2014 .

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

James S. Speck, Umesh K. Mishra, Tomas Palacios, 2007 .

Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

James S. Speck, Umesh K. Mishra, Yuval Golan, 1999 .

Next generation defect characterization in nitride HEMTs

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2011 .

Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes

Steven A. Ringel, James S. Speck, Umesh K. Mishra, 2000 .

Monolithic Ka-band phase shifter using voltage tunable BaSrTiO/sub 3/ parallel plate capacitors

James S. Speck, Robert A. York, A. S. Nagra, 2000 .

Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

James S. Speck, Xinru Wu, Umesh K. Mishra, 1998 .

Rutile films grown by molecular beam epitaxy on GaN and AlGaN∕GaN

James S. Speck, Robert A. York, Umesh K. Mishra, 2005 .

DOMAIN CONFIGURATIONS DUE TO MULTIPLE MISFIT RELAXATION MECHANISMS IN EPITAXIAL FERROELECTRIC THIN FILMS. I: THEORY

James S. Speck, W. Pompe, W. Pompe, 1994 .

Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2012 .

The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN

James S. Speck, J. Speck, G. Koblmüller, 2009 .

Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

James S. Speck, Cyrus E. Dreyer, John L. Lyons, 2016 .

Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction

James S. Speck, Umesh K. Mishra, James Ibbetson, 2000 .

Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

James S. Speck, Shuji Nakamura, Feng Wu, 2018 .

Origin of electrons emitted into vacuum from InGaN light emitting diodes

James S. Speck, Shuji Nakamura, Claude Weisbuch, 2014 .

Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

James S. Speck, Shuji Nakamura, Robert M. Farrell, 2016 .

Gallium adsorption onto (112̄0) gallium nitride surfaces

James S. Speck, Shuji Nakamura, Melvin McLaurin, 2004 .

High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes

Mathew C. Schmidt, James S. Speck, Shuji Nakamura, 2007 .

Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate

James S. Speck, Shuji Nakamura, Tien Khee Ng, 2015, 2015 IEEE Photonics Conference (IPC).

Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes

James S. Speck, Shuji Nakamura, Claude Weisbuch, 2012 .

CATHODOLUMINESCENCE MAPPING OF EPITAXIAL LATERAL OVERGROWTH IN GALLIUM NITRIDE

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1999 .

Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In 2 O 3 films

James S. Speck, Ashok T. Ramu, O. Bierwagen, 2013 .

β-Ga2O3 growth by plasma-assisted molecular beam epitaxya)

James S. Speck, Min-Ying Tsai, O. Bierwagen, 2010 .

Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1996 .

Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy

James S. Speck, Patrick Waltereit, Edward T. Yu, 2004 .

Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2005 .

Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes

James S. Speck, Shuji Nakamura, Robert M. Farrell, 2016 .

Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors

En Xia Zhang, Xiao Shen, Christiane Poblenz, 2011 .

GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

James S. Speck, Shuji Nakamura, Tien Khee Ng, 2016, 2016 IEEE Photonics Conference (IPC).

Nonpolar and semipolar LEDs

James S. Speck, J. Speck, C. Huang, 2014 .

Direct Pulse Position Modulation of a 410 nm Semipolar GaN Laser Diode for Space Optical Communications

James S. Speck, Jonathan Klamkin, Joseph Fridlander, 2018, 2018 Conference on Lasers and Electro-Optics (CLEO).