Akira Nishiyama

Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications

Y. Tsunashima, M. Takayanagi, M. Sato, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Effect of Hf-N bond on properties of thermally stable amorphous HfSiON and applicability of this material to sub-50nm technology node LSIs

M. Suzuki, T. Ino, A. Nishiyama, 2003, IEEE International Electron Devices Meeting 2003.