Jong-Bong Park

Bottom Electrode Structures of Pt/Ru Deposited on Polycrystalline Silicon for Semiconductor Memory Capacitors

Jun-Sik Hwang, Eun-Suck Choi, Jong-Bong Park, 1999 .

Extraction method of the interface and nitride trap density in nitride-based charge trapped flash memories using an optical response (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

G. C. Kang, Dong-Hyun Kim, Jong-Bong Park, 2007 .

A sonochemical route to single-walled carbon nanotubes under ambient conditions.

Wanjun Park, Jong-Bong Park, W. Park, 2004, Journal of the American Chemical Society.

Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays

U-In Chung, Dongsoo Lee, Hojung Kim, 2012, 2012 International Electron Devices Meeting.

Design of a C/SiC functionally graded coating for the oxidation protection of C/C composites

Jong-Bong Park, W. Kim, Jaehun Park, 2005 .

Phase-Change Behavior of Stoichiometric Ge2Sb2Te5 in Phase-Change Random Access Memory

Kinam Kim, Jong-Bong Park, Gyeong-Su Park, 2007 .

Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.

Jung-Hyun Lee, Jong-Bong Park, Chang Jung Kim, 2009, Nano letters.

Crystallization Behavior and Physical Properties of Sb-Excess Ge2Sb2 + x Te5 Thin Films for Phase Change Memory (PCM) Devices

Seung-Yup Lee, Byoung-Gon Yu, Jong-Bong Park, 2006 .

High threshold voltage p-GaN gate power devices on 200 mm Si

U-In Chung, Hyun-Sik Choi, Woochul Jeon, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).