Matthias Rudolph

发表

Direct extraction of HBT equivalent-circuit elements

Matthias Rudolph, Ralf Doerner, P. Heymann, 1999 .

Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator

Ulrich L. Rohde, Matthias Rudolph, Anisha Apte, 2017, IEEE Microwave Magazine.

A universal measurement system for microwave power transistors

Matthias Rudolph, Ralf Doerner, P. Heymann, 2000 .

On the magnetic coupling between bondwires in power-transistor packages

Matthias Rudolph, Wolfgang Heinrich, Frank Schnieder, 2010, German Microwave Conference Digest of Papers.

Compact HBT modeling: Status and challenges

Matthias Rudolph, M. Rudolph, 2010, 2010 IEEE MTT-S International Microwave Symposium.

Large-Signal Modeling of High-Voltage GaAs Power HBTs

Matthias Rudolph, Ralf Doerner, R. Doerner, 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

A novel low phase noise X-band oscillator

Ajay K. Poddar, Ulrich L. Rohde, Matthias Rudolph, 2014, 2014 IEEE Benjamin Franklin Symposium on Microwave and Antenna Sub-systems for Radar, Telecommunications, and Biomedical Applications (BenMAS).

Assessment of power-transistor package models: Distributed versus lumped approach

Matthias Rudolph, Wolfgang Heinrich, 2010, The 5th European Microwave Integrated Circuits Conference.

Noise in GaN HEMTs and circuits

Matthias Rudolph, Ralf Doerner, Wolfgang Heinrich, 2017, 2017 International Conference on Noise and Fluctuations (ICNF).

GaN HEMT noise model performance under nonlinear operation

Matthias Rudolph, Ralf Doerner, Laurent Escotte, 2014, 2014 44th European Microwave Conference.

NEW ALGORITHMFOREXTRACTIONOFFETNOISEMODEL PARAMETERS

Matthias Rudolph, Ralf Doerner, P. Heymann, 1998 .

Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices

Matthias Rudolph, Ralf Doerner, 2014 .

Dynamic behaviour of a low-noise amplifier GaN MMIC under input power overdrive

Olof Bengtsson, Matthias Rudolph, Ralf Doerner, 2015, 2015 European Microwave Conference (EuMC).

A peeling algorithm for extraction of the HBT small-signal equivalent circuit

Matthias Rudolph, B. Sheinman, V. Sidorov, 2002 .

Reliable GaN HEMT modeling based on Chalmers model and pulsed S-parameter measurements

Matthias Rudolph, Peng Luo, Olof Bengttson, 2016, 2016 German Microwave Conference (GeMiC).

On the Recovery Time of Highly Robust Low-Noise Amplifiers

Matthias Rudolph, Armin Liero, Nidhi Chaturvedi, 2010, IEEE Transactions on Microwave Theory and Techniques.

Unified model for collector charge in heterojunction bipolar transistors

Matthias Rudolph, Ralf Doerner, P. Heymann, 2002 .

Scalable GaInP/GaAs HBT large-signal model

Matthias Rudolph, Ralf Doerner, P. Heymann, 2000, IEEE MTT-S International Microwave Symposium Digest.

Limitations of current compact transit-time models for III–V-based HBTs

Matthias Rudolph, 2008, 2008 IEEE MTT-S International Microwave Symposium Digest.

Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer

Viktor Krozer, Matthias Rudolph, Wolfgang Heinrich, 2016, IEEE Transactions on Electron Devices.

Experimental evaluation of microwave field-effect-transistor noise models

Matthias Rudolph, Ralf Doerner, P. Heymann, 1999 .

Low-Frequency Noise in Nonlinear Systems : Its Impact on RF Performance and Implications for Device Modeling and Circuit Simulation

Fabrizio Bonani, Matthias Rudolph, F. Bonani, 2022 .

Robust stacked GaN-based low-noise amplifier MMIC for receiver applications

Olof Bengtsson, Matthias Rudolph, Ralf Doerner, 2015, 2015 IEEE MTT-S International Microwave Symposium.

Direct extraction of FET noise models from noise figure measurements

Matthias Rudolph, Ralf Doerner, P. Heymann, 2002 .

Towards a large-signal noise model for GaN HEMT devices

Matthias Rudolph, Ralf Doerner, R. Doerner, 2013, 2013 European Microwave Integrated Circuit Conference.

Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer

W. Heinrich, Matthias Rudolph, N. Weimann, 2015 .

An accurate package model for 60W GaN power transistors

Matthias Rudolph, Wolfgang Heinrich, Jens Flucke, 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio

Matthias Rudolph, Ralf Doerner, Wolfgang Heinrich, 2008 .

Highly linear broadband GaN-based low-noise amplifier

Matthias Rudolph, Wolfgang Heinrich, Armin Liero, 2010, German Microwave Conference Digest of Papers.