D. Via

Power performance of thermally-shunted heterojunction bipolar transistors

T. Jenkins, L. Kehias, R. Dettmer, 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

Measuring, modeling, and minimizing capacitances in heterojunction bipolar transistors

T. Jenkins, T. Quach, C. Bozada, 1996 .

Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors

Hung-Ta Wang, Stephen J. Pearton, Brent P. Gila, 2005 .

Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors

Rishabh Mehandru, S. J. Pearton, Brent P. Gila, 2004 .

Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation

S. J. Pearton, E. A. Douglas, D. Via, 2011, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors

Rishabh Mehandru, S. J. Pearton, Brent P. Gila, 2005 .

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

Albert G. Baca, S. J. Pearton, T. Jenkins, 2003 .

Annealing temperature stability of ir and ni-based ohmic contacts on AlGaN/GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2004 .