Susanna Reggiani

Design and optimization of impurity- and electrostatically-doped superlattice FETs to meet all the ITRS power targets at VDD=0.4V

Antonio Gnudi, Giorgio Baccarani, Elena Gnani, 2014 .

On the electron mobility of strained InGaAs channel MOSFETs

Antonio Gnudi, Elena Gnani, Susanna Reggiani, 2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC).

Theoretical analysis and modeling for nanoelectronics

Antonio Gnudi, Giorgio Baccarani, Elena Gnani, 2016 .

Drain-conductance optimization in nanowire TFETs by means of a physics-based analytical model

Antonio Gnudi, Giorgio Baccarani, Elena Gnani, 2013 .

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

Luca Selmi, Claire Fenouillet-Beranger, Asen Asenov, 2009 .