Teruyuki Hayashi

Study of ADI (After Develop Inspection) on photo resist wafers using electron beam (II)

Jack Jau, Joseph H. Lin, Teruyuki Hayashi, 2007, SPIE Advanced Lithography.

Electron beam charging of a SiO2 layer on Si: a comparison between Monte Carlo-simulated and experimental results

Jack Jau, Teruyuki Hayashi, Misako Saito, 2008, Lithography Asia.

Study of ADI (After Develop Inspection) on photo resist wafers using electron beam (III): novel method for ADI on metal hard mask by penetration contrast

Jack Jau, Teruyuki Hayashi, Misako Saito, 2008, SPIE Advanced Lithography.

Study of ADI (after develop inspection) using electron beam

Joseph H. Lin, Teruyuki Hayashi, Misako Saito, 2006, SPIE Advanced Lithography.

Preparation and Properties of Disilane and Disiloxane Unit-Fused Poly(diphenylamine)

Teruyuki Hayashi, Akira Adachi, H. Hayashi, 2003 .