Steve Stoffels

发表

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation

Alexander Satka, Juraj Marek, Ales Chvála, 2017, Microelectron. Reliab..

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

New fast distributed thermal model for analysis of GaN based power devices

Martine Baelmans, Ingrid De Wolf, Herman Oprins, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2014, Microelectron. Reliab..

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes

Guido Groeseneken, Jie Hu, Stefaan Decoutere, 2014, Microelectron. Reliab..

Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation

Juraj Marek, Daniel Donoval, Stefaan Decoutere, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

Gaudenzio Meneghesso, Stefaan Decoutere, Enrico Zanoni, 2017, Microelectron. Reliab..

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

Breakdown investigation in GaN-based MIS-HEMT devices

Fabio Alessio Marino, Gaudenzio Meneghesso, Denis Marcon, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015, 2015 IEEE International Reliability Physics Symposium.

Distributed electro-thermal model based on fast and scalable algorithm for GaN power devices and circuit simulations

Martine Baelmans, Ingrid De Wolf, Stefaan Decoutere, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

TCAD methodology for simulation of GaN-HEMT power devices

Denis Marcon, Benoit Bakeroot, Steve Stoffels, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon, Marleen Van Hove, Brice De Jaeger, 2015, Photonics West - Optoelectronic Materials and Devices.

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

Denis Marcon, Stefaan Decoutere, Xuanwu Kang, 2012, Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014, IEEE transactions on power electronics.

Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

Gaudenzio Meneghesso, Enrico Zanoni, Marleen Van Hove, 2016, IEEE Electron Device Letters.

Reliability and parasitic issues in GaN-based power HEMTs: a review

Gaudenzio Meneghesso, Enrico Zanoni, Stefaan Decoutere, 2016 .

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs

Gaudenzio Meneghesso, Niels Posthuma, Enrico Zanoni, 2018, IEEE Transactions on Electron Devices.

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

Denis Marcon, Hugo Bender, Stefaan Decoutere, 2013, IPFA 2013.

Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

Dirk Wellekens, Marleen Van Hove, Stefaan Decoutere, 2013, IEEE Transactions on Electron Devices.

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014 .

Monolithically Integrated E-mode GaN-on-SOI Gate Driver with Power GaN-HEMT for MHz-Switching

Kazutoshi Kobayashi, Niels Posthuma, Stefaan Decoutere, 2018, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

Enrico Sangiorgi, Niels Posthuma, Claudio Fiegna, 2019, IEEE Electron Device Letters.

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2015 .

Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2018, IEEE Electron Device Letters.

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015 .

Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015 .

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2016, IEEE Transactions on Electron Devices.

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Stefaan Decoutere, Benoit Bakeroot, Steve Stoffels, 2014 .

Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013, IEEE Transactions on Electron Devices.

FULL MESH WARPING TECHNIQUES

Steve Stoffels, S. Stoffels, 2000 .

Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, 2018, IEEE Transactions on Electron Devices.

Stability Evaluation of Insulated Gate AlGaN/GaN Power Switching Devices Under Heavy-Ion Irradiation

Denis Marcon, Marleen Van Hove, Stefaan Decoutere, 2013, IEEE Transactions on Nuclear Science.

Comparison of AlGaN/GaN MISHEMT powerbar designs

Denis Marcon, Stefaan Decoutere, Brice De Jaeger, 2014 .

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

Guido Groeseneken, Stefaan Decoutere, Brice De Jaeger, 2014 .

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Guido Groeseneken, Stefaan Decoutere, Benoit Bakeroot, 2015 .

PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

Enrico Sangiorgi, Paolo Magnone, Niels Posthuma, 2018, IEEE Transactions on Electron Devices.

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, IEEE Transactions on Electron Devices.

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Guido Groeseneken, Niels Posthuma, Denis Marcon, 2015, IEEE Electron Device Letters.

Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests

Guido Groeseneken, Ben Kaczer, Denis Marcon, 2017, IEEE Electron Device Letters.

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

Enrico Sangiorgi, Paolo Magnone, Niels Posthuma, 2017, IEEE Electron Device Letters.

High temperature calibration of a compact model for GaN-on-Si power switches

Denis Marcon, Marleen Van Hove, Stefaan Decoutere, 2011, 2011 17th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).

Finite element analysis of thermo-elastical modal damping of MEMS vibrations

Ingrid De Wolf, Hendrikus Tilmans, Steve Stoffels, 2007 .

Gate Stability of GaN-Based HEMTs with P-Type Gate

Gaudenzio Meneghesso, Niels Posthuma, Denis Marcon, 2016 .

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Guido Groeseneken, Denis Marcon, Marleen Van Hove, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A modeling and experimental method for accurate thermal analysis of AlGaN/GaN powerbars

Martine Baelmans, Ingrid De Wolf, Stefaan Decoutere, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).