Nae-In Lee

发表

High Voltage Operated 5.2 "Full Color Field Emission Display Devices with a Focus Electrode(2.3 FED関連)(2.報告概要)(Report on the 19th International Display Research Conference(Euro Display '99))

Youn-Suk Choi, Joon-hoo Choi, J. M. Kim, 1999 .

Ultra low power 6T-SRAM chip with improved transistor performance and reliability by HfO2-Al2O3 high-K gate dielectric process optimization

Young-Wug Kim, Kwang-Pyuk Suh, Hyun-Woo Lee, 2003 .

Noble design of Si-SOH in trilayer resist process for sub-30-nm logic device

Suhyun Kim, Dongsu Kim, Chansam Chang, 2010, Advanced Lithography.

Avalanche Electron Injection and Bias Temperature Effects on MOS Diode

Yung-Kwon Sung, Chan-Won Park, Nae-In Lee, 1988 .

Proactive BEOL yield improvement methodology for a successful mobile product

Jun Woo Lee, Jong Hyun Lee, Nae-In Lee, 2012, 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG).

At speed HTOL test for reliability qualification of high speed mobile applications

Donghee Lee, Sangwoo Pae, Jongwoo Park, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Modified trilayer resist approach for ArF immersion lithography

Suhyun Kim, Yong-Chul Kim, Chansam Chang, 2009, Advanced Lithography.

Size tolerance of sub-resolution assist features for sub-50-nm node device

Sung-Ho Lee, Byung-Sung Kim, Hong-Jae Shin, 2007, SPIE Advanced Lithography.

Improved stability of short-channel hydrogenated N-channel polycrystalline silicon thin-film transistors with very thin ECR N 2 O-plasma gate oxide

Chul-Hi Han, Nae-In Lee, N. Lee, 1998 .

The drive currents improvement of FDSOI MOSFETs with undoped Si epitaxial channel and elevated source/drain structure

Ho-Kyu Kang, Nae-In Lee, K. Fujihara, 2000, 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125).

The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrO x N y Gate Dielectrics

Jeong Hwan Kim, Sang Young Lee, Cheol Seong Hwang, 2010 .

Effect of polysilicon gate on the flatband voltage shift and mobility degradation for ALD-Al/sub 2/O/sub 3/ gate dielectric

Jongwook Jeon, Moosung Kim, Nae-In Lee, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant

Ho-Kyu Kang, Jong-Ho Lee, Cheol Seong Hwang, 2003 .

A highly manufacturable MIPS (metal inserted poly-Si stack) technology with novel threshold voltage control

Jong-Ho Lee, Hag-Ju Cho, Nae-In Lee, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

High-performance EEPROMs using N- and P-channel polysilicon thin-film transistors with electron cyclotron resonance N 2 O-plasma oxide

Chul-Hi Han, Nae-In Lee, N. Lee, 1999 .

Development of thermal neutron SER-resilient high-k/metal gate technology

Sangwoo Pae, Kyungsik Park, Jongsun Bae, 2014, 2014 IEEE International Reliability Physics Symposium.

Bias Temperature Instability Characteristics of n- and p-Type Field Effect Transistors Using HfO2 Gate Dielectrics and Metal Gate

Jeong Hwan Kim, Sang Young Lee, Cheol Seong Hwang, 2010 .