J. Ulloa

Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

D. F. Reyes, J. M. Ulloa, L. Stanojević, 2022, Applied Surface Science.

Control of Nitrogen Inhomogeneities in Type-I and Type-II GaAsSbN Superlattices for Solar Cell Devices

J. M. Ulloa, A. Gonzalo, V. Braza, 2019, Nanomaterials.

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

D. F. Reyes, A. D. Utrilla, J. M. Ulloa, 2017, Nanoscale Research Letters.

Analysis of the room temperature performance of 1.3-1.52 μm GaInNAs/GaAs LDs grown by MBE

J.-Y. Duboz, A. Hierro, Jm José Maria Ulloa, 2005, SPIE Microtechnologies.

Room temperature performance of low threshold 1.34-1.44-/spl mu/m GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy

J. M. Ulloa, J. Massies, B. Damilano, 2005, IEEE Photonics Technology Letters.

Correlation between quantum well morphology, carrier localization and the optoelectronic properties of GaInNAs/GaAs light emitting diodes

J. M. Ulloa, J. Chauveau, A. Hierro, 2006 .

Effect of nitrogen on the band structure and material gain of In/sub y/Ga/sub 1-y/As/sub 1-x/N/sub x/-GaAs quantum wells

J. M. Ulloa, J. Sánchez-Rojas, A. Hierro, 2003 .