Damian Pucicki

Influence of rapid thermal annealing on optical properties of (In, Ga)(As, N)/GaAs quantum wells

Marek Tłaczała, Wojciech Dawidowski, Beata Ściana, 2013, Electron Technology Conference.

Surface passivation of MSM photodetectors made on GaAsN epitaxial layers

Marek Panek, Marek Tłaczała, Beata Ściana, 2013, Electron Technology Conference.

Characterizations of GaInNAs/GaAs quantum wells

Jarosław Serafińczuk, Marek Tłaczała, Wojciech Dawidowski, 2013, Electron Technology Conference.

Influence of the AP MOVPE process parameters on properties of (In, Ga)(As, N)/ GaAs heterostructures for photovoltaic applications

Jarosław Serafińczuk, Jaroslav Kováč, Marek Tłaczała, 2013, Electron Technology Conference.

Characterisation of AP-MOVPE grown (Ga, In)(N, As) structures by Raman spectroscopy

Marek Tłaczała, Wojciech Dawidowski, Beata Ściana, 2013, Electron Technology Conference.