Paul C. McIntyre

发表

III-V/Ge Channel Engineering for Future CMOS

Mark J. W. Rodwell, Brian Thibeault, Seth R. Bank, 2009 .

Direct-gap photoluminescence from germanium nanowires

Shu Hu, Yoko Kawamura, Paul C. McIntyre, 2012 .

A Distributed Model for Border Traps in Al 2 O 3 − InGaAs MOS Devices

Yuan Taur, Mark J. W. Rodwell, Bo Yu, 2011 .

Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application

Krishna C. Saraswat, Paul C. McIntyre, K. Saraswat, 2003 .

Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density

Piero Pianetta, Paul C. McIntyre, Michael Shandalov, 2009 .

Ge based high performance nanoscale MOSFETs

Krishna C. Saraswat, Chi On Chui, Tejas Krishnamohan, 2005 .

Effects of catalyst material and atomic layer deposited TiO2 oxide thickness on the water oxidation performance of metal–insulator–silicon anodes

Paul C. McIntyre, Christopher E. D. Chidsey, Marika Gunji, 2013 .

Bulk and Interfacial Oxygen Defects in HfO2 Gate Dielectric Stacks: A Critical Assessment

Paul C. McIntyre, P. McIntyre, 2007, ECS Transactions.

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts.

Mario Lanza, David Goldhaber-Gordon, Fei Hui, 2017, Nano letters.

Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

Krishna C. Saraswat, Chi On Chui, Paul C. McIntyre, 2003 .

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

Paul C. McIntyre, P. McIntyre, Rathnait D. Long, 2012, Materials.

Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

Paul C. McIntyre, Michael Shandalov, Yasuhiro Oshima, 2010 .

A three-dimensional phase field model for nanowire growth by the vapor–liquid–solid mechanism

Seunghwa Ryu, Paul C. McIntyre, Wei Cai, 2014 .

Germanium Channel P-Mosfet with TiO2/Al2O3 Bilayer High-K Gate Stacks and Solutions for Metal/TiO2 Interface Stability

Paul C. McIntyre, Liangliang Zhang, Marika Gungi, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

Piero Pianetta, John Robertson, Paul C. McIntyre, 2016, ACS applied materials & interfaces.

Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition

Krishna C. Saraswat, Chi On Chui, Paul C. McIntyre, 2004 .

Phase Separation in Hafnium Silicates for Alternative Gate Dielectrics Influence on the Unoccupied States

Zhiqiang Chen, Susanne Stemmer, Shriram Ramanathan, 2003 .

Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

Krishna C. Saraswat, Peter M. Asbeck, Eunji Kim, 2009 .

Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

Krishna C. Saraswat, Chi On Chui, Susanne Stemmer, 2004 .

The Properties of Ferroelectric Films at Small Dimensions

Susan Trolier-McKinstry, Paul C. McIntyre, P. McIntyre, 2000 .

Interface-State Modeling of $\hbox{Al}_{2}\hbox{O}_{3}$ –InGaAs MOS From Depletion to Inversion

Yuan Taur, Mark J. W. Rodwell, Peter M. Asbeck, 2012, IEEE Transactions on Electron Devices.

FORMATION OF IRON OR CHROMIUM DOPED EPITAXIAL SAPPHIRE THIN FILMS ON SAPPHIRE SUBSTRATES

David R. Clarke, Ning Yu, Ian V. Mitchell, 1995 .

Resistive Switching Mechanism in Zn x Cd 1−x S Nonvolatile Memory Devices

Zheng Wang, Jim McVittie, Yoshio Nishi, 2007 .

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Xu Jing, Mario Lanza, Fei Hui, 2017 .

Epitaxial nucleation and growth of chemically derived Ba2YCu3O7−x thin films on (001) SrTiO3

Michael J. Cima, Paul C. McIntyre, Alexana Roshko, 1995 .

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

Krishna C. Saraswat, Peter M. Asbeck, Eunji Kim, 2010 .

Self-assembled monolayer resist for atomic layer deposition of HfO2 and ZrO2 high-κ gate dielectrics

Paul C. McIntyre, Stacey F. Bent, S. Bent, 2004 .

Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100)

Duygu Kuzum, Krishna C. Saraswat, Piero Pianetta, 2008 .

Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen

Steven A. Ringel, Yoshio Nishi, T. P. Ma, 2013 .

Photoemission studies of passivation of germanium nanowires

Piero Pianetta, Shiyu Sun, Paul C. McIntyre, 2005 .

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

John Robertson, Huanglong Li, Paul C. McIntyre, 2015, ACS applied materials & interfaces.

Nitride passivation of the interface between high-k dielectrics and SiGe

Lin Dong, Serge Oktyabrsky, Andrew C. Kummel, 2016 .

Atomic Layer Deposited TiO2–IrOx Alloys Enable Corrosion Resistant Water Oxidation on Silicon at High Photovoltage

Paul C. McIntyre, Christopher E. D. Chidsey, P. McIntyre, 2018, Chemistry of Materials.

Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

Qian Wang, Krishna C. Saraswat, Hongjie Dai, 2003 .