Robert Blondeau

发表

State of the arts of GaxIn1-xAsyP 1-y-InP laser grown By Low-Pressure Metalorganic Chemical Vapor Deposition

Manijeh Razeghi, Franck Omnes, P. Maurel, 1987, Other Conferences.

Monolithic integration of a Michelson all-optical wavelength converter

A. Enard, N. Vodjdani, Amaury Jourdan, 1996, Optical Fiber Communications, OFC..

Optical wavelength converters: techniques and system aspects

A. Enard, N. Vodjdani, Amaury Jourdan, 1996, Photonics West.

Monolithically Integrated Multi/Demultiplexer And Access Waveguides In InGaAsP/InP

A. Enard, Terry Young, Robert Blondeau, 1989, Other Conferences.

Very high uniformity of very low-threshold high-reliability 1.30-µm buried heterostructure laser diodes grown by metal-organic chemical vapor deposition

Manijeh Razeghi, Robert Blondeau, Michel Krakowski, 1986 .

Wavelength conversion devices and techniques

A. Enard, N. Vodjdani, Jean-Yves Emery, 1996, Proceedings of European Conference on Optical Communication.

High-efficiency high-speed (60-GHz) InGaAsP multimode waveguide photodetectors

Jean-Pierre Vilcot, Didier Decoster, Robert Blondeau, 1997, Photonics West.

Ultra-low-threshold, high-bandwidth, very-low noise operation of 1.52 mu m GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD

Robert Blondeau, A. Talneau, Michel Krakowski, 1989 .

Monolithic integration of 2x2 switch and optical amplifier with OdB fibre to fibre insertion loss grown by LP-MOCVD

A. Enard, Robert Blondeau, E. Lallier, 1993 .

Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition

M. Krakowski, Manijeh Razeghi, Robert Blondeau, 1985 .

Electro-optical modulators using novel buried waveguides in GaInAsP/InP material

A. Enard, Manijeh Razeghi, Robert Blondeau, 1988 .

First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate

F. Brillouet, Manijeh Razeghi, Robert Blondeau, 1988 .

Regeneration improvement in all-optical wavelength converter, based on a Mach-Zehnder interferometer, by means of phase-shifter section

A. Enard, Arnaud Dupas, N. Vodjdani, 1997 .

Low Threshold CW Operation GaInAsP/InP Mushroom Stripe Laser (MSL) Emitting at 1.27 µm

Robert Blondeau, J. Ricciardi, B. de Cremoux, 1982 .

CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD

Manijeh Razeghi, Robert Blondeau, Michel Krakowski, 1984 .

Abrupt OMVPE grown GaAs/GaAlAs heterojunctions

Robert Blondeau, M. Baldy, Michel Krakowski, 1984 .

cw operation of 1.57‐μm GaxIn1−xAsyP1−yInP distributed feedback lasers grown by low‐pressure metalorganic chemical vapor deposition

M. Krakowski, Manijeh Razeghi, Robert Blondeau, 1984 .