Alexander Burenkov

Monte Carlo simulation of silicon amorphization during ion implantation

Siegfried Selberherr, Heiner Ryssel, Jürgen Lorenz, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

Characterization of n-channel MOSFETs: Electrical measurements and simulation analysis

Jürgen Lorenz, Peter Pichler, Alexander Burenkov, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Variability-aware compact model strategy for 20-nm bulk MOSFETs

Asen Asenov, Liping Wang, Binjie Cheng, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation

Heiner Ryssel, Siegfried Selberherr, Jürgen Lorenz, 1995 .

Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations

Asen Asenov, Liping Wang, Xingsheng Wang, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

3D Simulation of Topography and Doping Processes at FhG

W. Henke, K. Tietzel, Jürgen Lorenz, 1995 .

Simulation for statistical variability in realistic 20nm MOSFET

Asen Asenov, Andrew R. Brown, Campbell Millar, 2014, 2014 15th International Conference on Ultimate Integration on Silicon (ULIS).

Analytical Model for Phosphorus Large Angle Tilted Implantation

Siegfried Selberherr, Heiner Ryssel, Jürgen Lorenz, 1995 .

Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

Anton J. Bauer, Peter Pichler, Alexander Burenkov, 2015, IEEE Transactions on Electron Devices.