R. I. Kung

The design and performance of CMOS 256K bit DRAM devices

A. Mohsen, R. I. Kung, C. Simonsen, 1984 .

Two 64K CMOS SRAMs with 13ns access time

R. I. Kung, Paul A. Reed, Stephen T. Flannagan, 1986, 1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

A 21-ns 32 K/spl times/8 CMOS static RAM with a selectively pumped p-well array

R. I. Kung, R. W. Mauntel, P. H. Voss, 1987 .

Two-13 ns-64K CMOS SRAM's with very low active power and improved asynchronous circuit techniques

R. I. Kung, Paul A. Reed, Stephen T. Flannagan, 1986 .

A 21ns 32K×8 CMOS SRAM with a selectively pumped P-well array

R. I. Kung, R. W. Mauntel, P. H. Voss, 1987, 1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

8-ns CMOS 64K×4 and 256K×1 SRAM's

R. I. Kung, Stephen T. Flannagan, Scott G. Nogle, 1990 .

A low standby power, high efficiency, clamped P-well bias generator for high density fast SRAMs

R. I. Kung, M. D. Bader, Ker-Wen Teng, 1988, Symposium 1988 on VLSI Circuits.