Denis Marcon

发表

Proceedings of 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)

Marco Silvestri, Michael J. Uren, Denis Marcon, 2013 .

High temperature behaviour of GaN-on-Si high power MISHEMT devices

Denis Marcon, Dirk Wellekens, Stefaan Decoutere, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2014, Microelectron. Reliab..

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors

Sergey Bychikhin, Dionyz Pogany, Gaudenzio Meneghesso, 2012, Microelectron. Reliab..

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015, Microelectron. Reliab..

Breakdown investigation in GaN-based MIS-HEMT devices

Fabio Alessio Marino, Gaudenzio Meneghesso, Denis Marcon, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015, 2015 IEEE International Reliability Physics Symposium.

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

GaN-based HEMTs tested under high temperature storage test

Denis Marcon, Stefaan Decoutere, G. Borghs, 2011, Microelectron. Reliab..

TCAD methodology for simulation of GaN-HEMT power devices

Denis Marcon, Benoit Bakeroot, Steve Stoffels, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon, Marleen Van Hove, Brice De Jaeger, 2015, Photonics West - Optoelectronic Materials and Devices.

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

Denis Marcon, Stefaan Decoutere, Xuanwu Kang, 2012, Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014, IEEE transactions on power electronics.

Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2011, 2011 International Electron Devices Meeting.

Degradation of AlGaN/GaN HEMTs below the “critical voltage”: a time-dependent analysis

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2012 .

Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

Denis Marcon, Martin Kuball, Michael J. Uren, 2013 .

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

Denis Marcon, Hugo Bender, Stefaan Decoutere, 2013, IPFA 2013.

In-situ passivation combined with GaN buffer optimization for extremely low current dispersion and low gate leakage in Si3N4/AlGaN/GaN HEMT devices on Si (111)

Denis Marcon, Gustaaf Borghs, J. Das, 2008 .

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014 .

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2015 .

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal

Denis Marcon, Gustaaf Borghs, Marleen Van Hove, 2011, IEEE Electron Device Letters.

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015 .

AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013, IEEE Transactions on Electron Devices.

Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015 .

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2012 .

Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013, IEEE Transactions on Electron Devices.

Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013 .

High temperature on- and off-state stress of GaN-on-Si HEMTs with in-situ Si3N4 cap layer

Denis Marcon, Robert Mertens, Gustaaf Borghs, 2010, 2010 IEEE International Reliability Physics Symposium.

Stability Evaluation of Insulated Gate AlGaN/GaN Power Switching Devices Under Heavy-Ion Irradiation

Denis Marcon, Marleen Van Hove, Stefaan Decoutere, 2013, IEEE Transactions on Nuclear Science.

Comparison of AlGaN/GaN MISHEMT powerbar designs

Denis Marcon, Stefaan Decoutere, Brice De Jaeger, 2014 .

PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

Enrico Sangiorgi, Paolo Magnone, Niels Posthuma, 2018, IEEE Transactions on Electron Devices.

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, IEEE Transactions on Electron Devices.

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Guido Groeseneken, Niels Posthuma, Denis Marcon, 2015, IEEE Electron Device Letters.

GaN‐on‐Si HEMT stress under high electric field condition

Denis Marcon, Robert Mertens, Gustaaf Borghs, 2009 .

Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests

Guido Groeseneken, Ben Kaczer, Denis Marcon, 2017, IEEE Electron Device Letters.

Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 µm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C

Denis Marcon, Robert Mertens, Gustaaf Borghs, 2010 .

High temperature calibration of a compact model for GaN-on-Si power switches

Denis Marcon, Marleen Van Hove, Stefaan Decoutere, 2011, 2011 17th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).

Gate Stability of GaN-Based HEMTs with P-Type Gate

Gaudenzio Meneghesso, Niels Posthuma, Denis Marcon, 2016 .

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Guido Groeseneken, Denis Marcon, Marleen Van Hove, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).