Norihiko Samoto

发表

High Performance HJFET MMIC with Embedded Gate Technology for Microwave and Millimeter-Wave IC's Using EB Lithography EMMIE)

Y. Makino, A. Wakejima, Norihiko Samoto, 1999 .

Monitor technology of outer circumstances for mask EB writing system

Hiromichi Hoshi, Masaki Yamabe, Norihiko Samoto, 2010, Photomask Japan.

Acid evaporation property in chemically amplified resists

Toshiro Itani, Hiroshi Yoshino, Kunihiko Kasama, 1997, Advanced Lithography.

Monitor and self-diagnostic technology for mask e-beam writing system

Hiromichi Hoshi, Masaki Yamabe, Satoshi Iida, 2009, Advanced Lithography.

Super-low noise heterojunction field-effect transistors (HJETs) with 0.2 μm T-shaped 8 gate fingers

Y. Nashimoto, Norihiko Samoto, S. Ichikawa, 1992 .

Deblocking reaction of chemically amplified positive DUV resists

Toshiro Itani, Kunihiko Kasama, Shuichi Hashimoto, 1997, Advanced Lithography.

60GHz coplanar low-noise amplifier fabricated using AlAs/InAs superlattice-inserted inp-based heterojunction FETs

Hironobu Miyamoto, Akira Fujihara, Norihiko Samoto, 2001 .

LEEPL production tool: EBPrinter LEEPL-3000

Akihiro Endo, Toyoji Fukui, Hideaki Takano, 2004, SPIE Advanced Lithography.

Halation reduction for single-layer DUV resist processing

Toshiro Itani, Hiroshi Yoshino, Shuichi Hashimoto, 1996, Advanced Lithography.

Improvement of data transfer speed and development of an EB data verification system in a VSB mask writer

Hiromichi Hoshi, Masaki Yamabe, Tadashi Komagata, 2009, Photomask Japan.

Polymer structure effect on dissolution characteristics and acid diffusion in chemically amplified deep ultraviolet resists

Toshiro Itani, Kunihiko Kasama, Mitsuharu Yamana, 1997 .

Sub‐0.1‐μm T‐shaped gate fabrication technology using mixing‐layer sidewalls in a double‐layer resist system

Norihiko Samoto, K. Yamanoguchi, I. Miura, 1994 .

V-band MMIC LNA using superlattice-inserted InP heterojunction FETs

Hironobu Miyamoto, Norihiko Samoto, K. Yamanoguchi, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

Theoretical study of the ultimate resolution in electron beam lithography by Monte Carlo simulation, including secondary electron generation: Energy dissipation profile in polymethylmethacrylate

Norihiko Samoto, Ryuichi Shimizu, 1983 .

A study of acid diffusion in chemically amplified deep ultraviolet resist

Toshiro Itani, Kunihiko Kasama, Mitsuharu Yamana, 1996 .

A novel electron‐beam exposure technique for 0.1‐μm T‐shaped gate fabrication

Kazuhiko Onda, Norihiko Samoto, T. Itoh, 1990 .

A study of acid evaporation property in chemically amplified resists

Toshiro Itani, Kunihiko Kasama, Mitsuharu Yamana, 1997 .

Photoacid Diffusion in Chemically Amplified DUV Resists

Toshiro Itani, Kunihiko Kasama, Mitsuharu Yamana, 1998 .

Investigation of environment stability in chemically amplified resists

Toshiro Itani, Kunihiko Kasama, Omkaram Nalamasu, 1997 .

Relationship between Remaining Solvent and Acid Diffusion in Chemically Amplified Deep Ultraviolet Resists

Toshiro Itani, Kunihiko Kasama, Mitsuharu Yamana, 1996 .

Acid and base diffusion in chemically amplified DUV resists

Toshiro Itani, Kunihiko Kasama, Mitsuharu Yamana, 1997 .

Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion Beams

Kenji Gamo, Susumu Namba, Norihiko Samoto, 1984 .