K. Yamanoguchi

High Performance HJFET MMIC with Embedded Gate Technology for Microwave and Millimeter-Wave IC's Using EB Lithography EMMIE)

Y. Makino, A. Wakejima, Norihiko Samoto, 1999 .

AlGaN/GaN field-plate FETs for microwave power applications

Takashi Inoue, Yuji Ando, Hironobu Miyamoto, 2007, SPIE OPTO.

Sub‐0.1‐μm T‐shaped gate fabrication technology using mixing‐layer sidewalls in a double‐layer resist system

Norihiko Samoto, K. Yamanoguchi, I. Miura, 1994 .

V-band MMIC LNA using superlattice-inserted InP heterojunction FETs

Hironobu Miyamoto, Norihiko Samoto, K. Yamanoguchi, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

C-band Single-Chip GaN-FET Power Amplifiers with 60-W Output Power

K. Matsunaga, Y. Okamoto, A. Wakejima, 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

Theoretical and Experimental Study of Inverse Piezoelectric Effect in AlGaN/GaN Field-Plated Heterostructure Field-Effect Transistors

K. Asano, K. Ishikura, K. Yamanoguchi, 2012, IEEE Transactions on Electron Devices.

Novel AlGaN/GaN dual-field-plate FET with high gain, increased linearity and stability

K. Matsunaga, Y. Okamoto, A. Wakejima, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

High performance 60-GHz coplanar MMIC LNA using InP heterojunction FETs with AlAs/InAs superlattice layer

K. Yamanoguchi, A. Fujihara, Y. Makino, 2000, 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096).

A 76 GHz GaN-on-silicon power amplifier for automotive radar systems

K. Matsunaga, H. Shimawaki, M. Tanomura, 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.