Miyo Miyashita

发表

Design and Measurements of Building Blocks Supporting a 1.9-GHz-Band BiFET MMIC Power Amplifier for WCDMA Handsets

Satoshi Suzuki, Kazuya Yamamoto, Hiroaki Seki, 2016, IEICE Trans. Electron..

0.8-/1.5-GHz-Band WCDMA HBT MMIC Power Amplifiers with an Analog Bias Control Scheme

Satoshi Suzuki, Kazuya Yamamoto, Hiroaki Seki, 2015, IEICE Trans. Electron..

3.5-GHz-Band Low-Bias-Current Operation 0/20-dB Step Linearized Attenuators Using GaAs-HBT Compatible, AC-Coupled, Stack Type Base-Collector Diode Switch Topology

Takeshi Miura, Kazuya Yamamoto, Nobuyuki Ogawa, 2007, IEICE Trans. Electron..

Compact Multi-Chip-Module for High Speed Lightwave Transmitters

Junichi Nakagawa, Masaaki Shimada, Kuniaki Motoshima, 1997 .

A 3.5-GHz-Band GaAs HBT Stage-Bypass-Type Step-Gain Amplifier Using Base-Collector Diode Switches and Its Application to a WiMAX HBT MMIC Power Amplifier Module

Satoshi Suzuki, Kazuya Yamamoto, Hiroaki Seki, 2015, IEICE Trans. Electron..

Design and Measurements of Two-Gain-Mode GaAs-BiFET MMIC Power Amplifier Modules with Small Phase Discontinuity for WCDMA Data Communications

Satoshi Suzuki, Kazuya Yamamoto, Hiroaki Seki, 2018, IEICE Trans. Electron..

A Current-Mirror-Based GaAs-HBT RF Power Detector Suitable for Base Terminal Monitoring in an HBT Power Stage

Satoshi Suzuki, Kazuya Yamamoto, Hiroaki Seki, 2015, IEICE Trans. Electron..

A Receive-Band-Noise Estimation Method and Its Application to a WCDMA Band 11/21 GaAs-BiFET MMIC Power Amplifier Module

Satoshi Suzuki, Kazuya Yamamoto, Kazuhiro Iyomasa, 2016, IEEE Transactions on Microwave Theory and Techniques.

Experimental Study on CDMA GaAs HBT MMIC Power Amplifier Layout Design for Reducing Turn-On Delay in Transient Response

Satoshi Suzuki, Tomoyuki Asada, Kazuya Yamamoto, 2017, IEICE Trans. Electron..

A New Broadband Buffer Circuit Technique and Its Application to a 10-Gbit/s Decision Circuit Using Production-Level 0.5 æm GaAs MESFETs

Kazuya Yamamoto, Etsuji Omura, Miyo Miyashita, 1998 .

Ku-Band 70-/30-W-Class Internally Matched GaN Power Amplifiers With Low IMD3 Over a Wide Offset Frequency Range of Up To 400 MHz

Kazuya Yamamoto, Hiroaki Maehara, Miyo Miyashita, 2021, IEEE Journal of Solid-State Circuits.

A WCDMA Multiband Power Amplifier Module With Si-CMOS/GaAs-HBT Hybrid Power-Stage Configuration

Kazuya Yamamoto, Morishige Hieda, Fumimasa Kitabayashi, 2016, IEEE Transactions on Microwave Theory and Techniques.

Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy

Etsuji Omura, Teruyuki Shimura, Miyo Miyashita, 1994 .

A dual-gain-mode high efficiency power amplifier for W-CDMA data communications

Shintaro Shinjo, Koji Yamanaka, Kazuya Yamamoto, 2014, 2014 Asia-Pacific Microwave Conference.

60% PAE, 30W X-band and 33% PAE, 100W Ku-band PAs utilizing 0.15 μm GaN HEMT technology

Koji Yamanaka, Tetsuo Kunii, Hideaki Katayama, 2016, 2016 46th European Microwave Conference (EuMC).