J. R. Lothian

发表

Spectral phase encoded time spread optical code division multiple access technology for next generation communication networks [Invited]

Anh-Vu Pham, Chunxin Yang, Sebastian Lourdudoss, 2007 .

An In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As power HEMT with 65.2% power-added efficiency under 1.2 V operation

Jenshan Lin, J. M. Kuo, Y. K. Chen, 1998 .

Thermal simulations of high power, bulk GaN rectifiers

S. S. Park, Rishabh Mehandru, Stephen J. Pearton, 2003 .

Effect of high density H2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

R. F. Kopf, J. M. Kuo, S. J. Pearton, 1998 .

Ar+‐ion milling characteristics of III‐V nitrides

Stephen J. Pearton, C. R. Abernathy, J. R. Lothian, 1994 .

High rate dry etching of InGaP in BCl3 plasma chemistries

S. J. Pearton, Melanie W. Cole, W. S. Hobson, 1995 .

Wet and Dry Etching of InGaP

J. M. Kuo, Stephen J. Pearton, J. R. Lothian, 1991 .

Reduction of sidewall roughness during dry etching of SiO2

S. J. Pearton, W. S. Hobson, C. R. Abernathy, 1992 .

A novel monolithically integrated Mach-Zehnder wavelength converter using cross modulation in electro-absorber

S. J. B. Yoo, W. S. Hobson, T. Tekin, 2005 .

Extremely High Etch Rates of In‐Based III‐V Semiconductors in BCl3 / N 2 Based Plasma

S. J. Pearton, Melanie W. Cole, W. S. Hobson, 1996 .

10 Gbit/s high sensitivity low error rate decision circuit implemented with C-doped AlGaAs/GaAs HBTs

R. F. Kopf, R. N. Nottenburg, Stephen J. Pearton, 1991 .

Y-gate submicron gate length GaAs metal-semiconductor field effect transistors

S. J. Pearton, C. R. Abernathy, J. R. Lothian, 1993 .

Dry etching of thin-film InN, AlN and GaN

Stephen J. Pearton, C. R. Abernathy, J. R. Lothian, 1993 .

Fabrication of Y‐gate, submicron gate length GaAs metal–semiconductor field effect transistors

S. J. Pearton, C. R. Abernathy, J. R. Lothian, 1993 .

ECR plasma etching of chemically vapour deposited diamond thin films

Stephen J. Pearton, J. R. Lothian, Avishay Katz, 1992 .

Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy

S. J. Pearton, C. R. Abernathy, J. R. Lothian, 1993 .

GaN Metal Oxide Semiconductor Field Effect Transistors

Albert G. Baca, R. J. Shul, Stephen J. Pearton, 1999 .

High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors

P. C. Chao, Shin-Shem Pei, Stephen J. Pearton, 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

W and WSix Ohmic contacts on p- and n-type GaN

S. J. Pearton, R. J. Shul, J. C. Zolper, 1999 .