P. D. Foo

发表

Polymer residue chemical composition analysis and its effect on via contact resistance in dual damascene copper interconnects process integration

Y. S. Zheng, Q. Guo, Y. J. Su, 2003, Microelectron. J..

Investigation of near-room-temperature self-annealing of electrochemical-deposited (ECD) blanket copper films

P. D. Foo, Weng Hong Teh, L. T. Koh, 2000, Other Conferences.

Influence of IMP copper flash layer on the properties of copper films deposited by metal organic chemical vapor deposition

P. D. Foo, Joseph Xie, Bo Yu, 1999, Advanced Lithography.

IMP copper seed layer formation with TaN barrier for deep submicron

P. D. Foo, Joseph Xie, Bo Yu, 1999, Advanced Lithography.

Investigation of defect on copper bond pad surface in copper/low k process integration

Y. S. Zheng, Y. J. Su, P. D. Foo, 2003, Microelectron. Reliab..

SiCN and Ta/TaN barriers for Cu/ultralow-k integration in 0.13µm technology

P. D. Foo, L. Y. Yang, D. H. Zhang, 2004, International Conference on Thin Film Physics and Applications.

Factors influencing open circuit decomposition behavior of sulfur-containing additive component used in Cu plating for advanced interconnect metallization

P. D. Foo, L. T. Koh, P. Foo, 2001 .

Investigation of the effects of byproduct components in Cu plating for advanced interconnect metallization

P. D. Foo, L. T. Koh, P. Foo, 2002 .

Diffusion Studies of Cu in Si and Low-k Dielectric Materials

Cher Ming Tan, P. D. Foo, S. R. Wang, 2002 .

EFFECT OF UNDERLAYERS ON THE STRESS OF CU FILMS PREPARED USING IONIZED METAL PLASMA

P. D. Foo, Dao Hua Zhang, P. Foo, 2002 .

Characterization of Carbon-Doped SiO2 Low k Thin Films: Preparation by Plasma-Enhanced Chemical Vapor Deposition from Tetramethylsilane

P. D. Foo, Jianou Shi, N. Balasubramanian, 2001 .