Hiroichi Kawahira

发表

New mask optimization methodology using exposure-defocus and mask fabrication latitude

Keisuke Tsudaka, Minoru Sugawara, Hiroichi Kawahira, 1994, Photomask and Next Generation Lithography Mask Technology.

Compositional analysis of progressive defects on a photomask

Hiroichi Kawahira, Koichiro Saga, 2007, SPIE Photomask Technology.

Development of a fast line width correction system

Hiroichi Kawahira, Ryuji Takenouchi, Isao Ashida, 2000 .

Proposal of new layout data format for LSI patterns

Hiroichi Kawahira, Isao Ashida, Yutaka Sato, 1999, Photomask and Next Generation Lithography Mask Technology.

Optimization of dual BARC structures for hyper-NA immersion lithography

Hiroichi Kawahira, Hiroyuki Nakano, Nobuyuki Matsuzawa, 2006, SPIE Advanced Lithography.

EB proximity effect correction system for 0.25-μm device reticle fabrication

Hidetoshi Ohnuma, Hiroichi Kawahira, Manabu Tomita, 1995, Photomask and Next Generation Lithography Mask Technology.

Practical evaluation of optical-proximity effect correction by EDM methodology

Keisuke Tsudaka, Minoru Sugawara, Hiroichi Kawahira, 1995, Advanced Lithography.

BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography

Tetsuya Kitagawa, Hiroichi Kawahira, Hiroyuki Nakano, 2005, SPIE Advanced Lithography.

New data processing of dummy pattern generation adaptive for CMP process

Hiroichi Kawahira, Isao Ashida, Shinichi Ueki, 1999, Photomask and Next Generation Lithography Mask Technology.

Development of a fast linewidth correction system

Hiroichi Kawahira, Ryuji Takenouchi, Isao Ashida, 2000, Photomask Japan.

Advanced pattern correction method for fabricating highly accurate reticles

Hiroichi Kawahira, Masaaki Koyama, Shunichiro Sato, 2002, Photomask Japan.

Defect printability of alternating phase-shift mask: a critical comparison of simulation and experiment

Hidetoshi Ohnuma, Hiroichi Kawahira, Ken Ozawa, 2002, SPIE Advanced Lithography.

Fast Chip Level OPC Method on Mask Database

Hidetoshi Ohnuma, Keisuke Tsudaka, Hiroichi Kawahira, 1997 .

Estimation of attenuated phase-shifting mask fabrication latitude using an optical exposure-defocus methodology

Keisuke Tsudaka, Minoru Sugawara, Hiroichi Kawahira, 1994, Advanced Lithography.

Fabrication process of Cr-based attenuated phase-shift masks for KrF excimer laser lithography

Hiroichi Kawahira, Kiichi Ishikawa, Ichiro Kagami, 1999, Photomask Technology.

New method for reducing across-chip poly-CD variation with statistical OPC/gauge capability analysis

Hidetoshi Ohnuma, Hiroichi Kawahira, Koji Kikuchi, 2002, SPIE Advanced Lithography.

Development of Cr-based attenuated phase-shift mask process for 0.18-μm device generation

Hiroichi Kawahira, Kiichi Ishikawa, Ichiro Kagami, 1999, Photomask and Next Generation Lithography Mask Technology.

Robust lithography process control methodology anticipating CD after etching using scatterometry below 65nm node

Atsushi Someya, Hiroichi Kawahira, Tokihisa Kaneguchi, 2004, SPIE Advanced Lithography.

Optimization of fabrication process for dual-trench-type alternating PSM

Hiroichi Kawahira, Tooru Komizo, Ichiro Kagami, 2001, Photomask Japan.

Defect printability study of attenuated phase-shifting masks for specifying inspection sensitivity

Minoru Sugawara, Hiroichi Kawahira, Satoru Nozawa, 1995, Photomask Technology.

SEMI standards programmed defect masks and its application for defect inspection

Yoshiki Suzuki, Hiroichi Kawahira, 1995, Advanced Lithography.

Influence of process latitude on exposure characteristics

Minoru Sugawara, Hiroichi Kawahira, Satoru Nozawa, 1996, Advanced Lithography.

Effective data compaction algorithm for vector scan EB writing system

Hiroichi Kawahira, Isao Ashida, Shinichi Ueki, 2001, SPIE Photomask Technology.

New mask data verification method after optical proximity effect correction

Kazuhisa Ogawa, Hiroichi Kawahira, Isao Ashida, 2001, Photomask Japan.

First via-hole TEG fabricated by using 90-nm CMOS technology and proximity electron lithography: electric and lithographic results

Tetsuya Kitagawa, Kazuya Iwase, Hiroichi Kawahira, 2004, SPIE Advanced Lithography.

Photomask fabrication feasibility for next-generation reticle format

Hiroichi Kawahira, Satoru Nozawa, Mikio Katsumata, 1997, Photomask and Next Generation Lithography Mask Technology.

Practical Optical Proximity Effect Correction Adopting Process Latitude Consideration

Hidetoshi Ohnuma, Keisuke Tsudaka, Minoru Sugawara, 1995 .

LITHOGRAPHY COMPUTER AIDED DESIGN TECHNOLOGY FOR EMBEDDED MEMORY IN LOGIC

Hidetoshi Ohnuma, Keisuke Tsudaka, Hiroichi Kawahira, 1998 .

Manufacturing feasibility of OPC masks for 0.25-μm rule devices

Keisuke Tsudaka, Hiroichi Kawahira, Akihiro Ogura, 1996, Photomask and Next Generation Lithography Mask Technology.

New method for reducing across chip poly-CD variation with statistical OPC/gauge capability analysis

Hidetoshi Ohnuma, Hiroichi Kawahira, Koji Kikuchi, 2002, SPIE Photomask Technology.

Fast-resist image estimation methodology using light-intensity distribution

Keisuke Tsudaka, Minoru Sugawara, Hiroichi Kawahira, 1995, Photomask and Next Generation Lithography Mask Technology.

New optimization method of exposure with alternative phase-shifting masks

Hidetoshi Ohnuma, Hiroichi Kawahira, Koji Kikuchi, 2001, Photomask Japan.

Focused ion beam repair for quartz bump defect of alternating phase-shift masks

Hiroichi Kawahira, Tooru Komizo, Ichiro Kagami, 2001, Photomask Japan.

Fast EB-PEC system for 0.25-um device reticle fabrication using a variable shaped beam machine

Hidetoshi Ohnuma, Hiroichi Kawahira, Manabu Tomita, 1995, Photomask Technology.

SEMI standards programmed-defect masks and their applications for defect inspection

Yoshiki Suzuki, Hiroichi Kawahira, 1995, Photomask and Next Generation Lithography Mask Technology.

Lithography of choice for the 45-nm node: new medium, new wavelength, or new beam?

Kazuhisa Ogawa, Hiroichi Kawahira, Koichi Takeuchi, 2004, SPIE Advanced Lithography.

Magnetic neutral loop discharge etching for 130-nm generation photomask fabrication

Hiroichi Kawahira, Mikio Katsumata, 2000, Photomask Japan.

Review of defect round table at Photomask Japan '96

Hiroichi Kawahira, James N. Wiley, 1996, Photomask Technology.

Comparison of mulitpass gray strategy and conventional writing method

Hiroichi Kawahira, Masaaki Koyama, Ichiro Kagami, 1999, Photomask and Next Generation Lithography Mask Technology.

Attenuated phase-shifting mask specification with modified beam illumination

Keisuke Tsudaka, Minoru Sugawara, Hiroichi Kawahira, 1995, Photomask Technology.

Issues on mask technologies: 0.18-μm and beyond

Naoya Hayashi, Hiroichi Kawahira, Hideaki Hamada, 1998, Photomask Technology.

Automatic alternative phase-shift mask CAD layout tool for gate shrinkage of embedded DRAM in logic below 0.18 μm

Hidetoshi Ohnuma, Hiroichi Kawahira, 1998, Photomask and Next Generation Lithography Mask Technology.

Chemically amplified resist process for 0.25-μm generation photomasks

Minoru Sugawara, Hiroichi Kawahira, Satoru Nozawa, 1996, Photomask and Next Generation Lithography Mask Technology.

Changes of chemical nature of photoresists induced by various plasma treatments and their impact on LWR

Hiroichi Kawahira, Masashi Yoshida, Nobuyuki Matsuzawa, 2006, SPIE Advanced Lithography.

Novel robust optimization method of lithographic conditions for correlative multilayers beyond 65 nm node

Hiroichi Kawahira, Ken Ozawa, Koichi Takeuchi, 2004, SPIE Advanced Lithography.

PMJ00 Panel Discussion review, 'high performance devices in the new century; optical lithography and mask strategy for 0.13-um SoC'

Hiroichi Kawahira, Vic Nagano, 2001 .

Fast chip-level OPC system on mask database

Hidetoshi Ohnuma, Keisuke Tsudaka, Hiroichi Kawahira, 1997, Photomask and Next Generation Lithography Mask Technology.

Development of practical attenuated phase-shifting mask

Keisuke Tsudaka, Minoru Sugawara, Hiroichi Kawahira, 1994, Photomask and Next Generation Lithography Mask Technology.

PMJ' 99 panel discussion review: OPC mask technology for KrF lithography

Naoya Hayashi, Hiroichi Kawahira, Hideaki Hamada, 1999, Photomask Technology.

Chemically amplified resist process for 0.25-um-generation photomasks

Minoru Sugawara, Hiroichi Kawahira, Satoru Nozawa, 1996, Photomask Technology.

Method of expanding process window for the double exposure technique with alt-PSMs

Hidetoshi Ohnuma, Hiroichi Kawahira, Kohji Kikuchi, 2000, Advanced Lithography.

Simulation-Based Automatic Optical Proximity Effect Correction Adaptive for Device Fabrication.

Hidetoshi Ohnuma, Keisuke Tsudaka, Hiroichi Kawahira, 1997 .

Photomask and Next-Generation Lithography Mask Technology IX

Hiroichi Kawahira, 2001 .

New Systematic Evaluation Method for Attenuated Phase-Shifting Mask Specifications.

Keisuke Tsudaka, Hiroichi Kawahira, Satoru Nozawa, 1995 .

Evaluation of Phase-Shifting Masks for Dense Contact Holes Using the Exposure-Defocus and Mask Fabrication Latitude Methodology

Keisuke Tsudaka, Hiroichi Kawahira, Satoru Nozawa, 1994 .