Christoph Jungemann

发表

Noise Calculation in the Semiclassical Framework: A Critical Analysis of the Monte Carlo Method and a Numerical Alternative

Christoph Jungemann, Bernd Meinerzhagen, C. Jungemann, 2005, LSSC.

In-Advance CPU Time Analysis for Stationary Monte Carlo Device Simulations( the IEEE International Conference on SISPAD '02)

Christoph Jungemann, Bernd Meinerzhagen, 2003 .

High Performance Full-Band Monte Carlo Device Simulator FALCON

Hiroshi Goto, Christoph Jungemann, S. Yamaguchi, 1997 .

HYDRODYNAMIC MODELING OF RF NOISE FOR SILICON-BASED DEVICES

Christoph Jungemann, Bernd Meinerzhagen, B. Neinhus, 2003 .

Close-in phase noise in integrated oscillators

Christoph Jungemann, Thomas H. Lee, Robert W. Dutton, 2004, SPIE International Symposium on Fluctuations and Noise.

Accuracy assessment of compact RF noise models for SiGe HBTs by hydrodynamic device simulation

Bernd Meinerzhagen, Christoph Jungemann, Burkhard Neinhues, 2004, SPIE International Symposium on Fluctuations and Noise.

Deterministic simulation of 3D and quasi-2D electron and hole systems in SiGe devices

Christoph Jungemann, Bernd Meinerzhagen, Sung-Min Hong, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Microscopic modeling of impact-ionization noise in SiGe heterojunction bipolar transistors

Christoph Jungemann, Paulius Sakalas, Mindaugas Ramonas, 2007, SPIE International Symposium on Fluctuations and Noise.

In-advance CPU time analysis for Monte Carlo device simulations

Christoph Jungemann, Bernd Meinerzhagen, 2002, International Conferencre on Simulation of Semiconductor Processes and Devices.

Numerical modeling of electron noise in nanoscale Si devices

Christoph Jungemann, C. Jungemann, 2007, SPIE International Symposium on Fluctuations and Noise.

A fully integrated 5.5 GHz cross-coupled VCO with high output power using 0.25μm CMOS technology

Christoph Jungemann, Bernd Meinerzhagen, J. Dang, 2014, 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS).

A deterministic solver for the Langevin Boltzmann equation including the Pauli principle

Christoph Jungemann, C. Jungemann, 2007, SPIE International Symposium on Fluctuations and Noise.

Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile

Christoph Jungemann, Bernd Meinerzhagen, B. Neinhus, 1999, 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387).

Simulation of exciton effects in OLEDs based on the master equation

Christoph Jungemann, Christoph Zimmermann, Weifeng Zhou, 2017, Organic Photonics + Electronics.

IS PHYSICALLY SOUND AND PREDICTIVE MODELING OF NMOS SUBSTRATE CURRENTS POSSIBLE

Christoph Jungemann, Bernd Meinerzhagen, H. Goto, 1998 .

Simulation of THz Oscillations in Semiconductor Devices Based on Balance Equations

Christoph Jungemann, Kai Bittner, Tobias Linn, 2020, Journal of Scientific Computing.

Noise in Green Transistors (Small Slope Switches)

Christoph Jungemann, 2009 .

Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anode

Stephan Menzel, Christoph Jungemann, Wilhelm Stehling, 2017, 2017 17th Non-Volatile Memory Technology Symposium (NVMTS).

Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations

Stephan Menzel, Christoph Jungemann, Elhameh Abbaspour, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

On The Modeling Of CV Data For State-Of-The-Art CMOS Technologies: Do We Need To Include Fast Interface States?

Christoph Jungemann, Bernd Meinerzhagen, 1998 .

Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results

Christoph Jungemann, Bernd Meinerzhagen, B. Neinhus, 2002 .

Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation

Christoph Jungemann, H. Goto, S. Decker, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

A fast $\vec{k}\cdot\vec{p}$ solver for hole inversion layers with an efficient 2D $\vec{k}$ -space discretization

Christoph Jungemann, Bernd Meinerzhagen, A. T. Pham, 2008 .

Hierarchical Device Simulation

Christoph Jungemann, Bernd Meinerzhagen, C. Jungemann, 2003 .

Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation

Karl Rupp, Tibor Grasser, Christoph Jungemann, 2012 .

Nonparabolic macroscopic transport models for device simulation based on bulk Monte Carlo data

Siegfried Selberherr, Tibor Grasser, Christoph Jungemann, 2005 .

Impact of the carrier distribution function on hot-carrier degradation modeling

Tibor Grasser, Christoph Jungemann, Ivan Starkov, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Simulation of plasma resonances in MOSFETs for THz-signal detection

Christoph Jungemann, K. Bittner, H. G. Brachtendorf, 2016, 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Advanced Transport Models for Sub-Micrometer Devices

Siegfried Selberherr, Tibor Grasser, Christoph Jungemann, 2004 .

Microscopic Hot-Carrier Degradation Modeling of SiGe HBTs Under Stress Conditions Close to the SOA Limit

Thomas Zimmer, Christoph Jungemann, Cristell Maneux, 2017, IEEE Transactions on Electron Devices.

High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs

Siegfried Selberherr, Krishna C. Saraswat, Christoph Jungemann, 2007 .

Interface states charges as a vital component for hc degradation modeling.

E. Seebacher, Tibor Grasser, Christoph Jungemann, 2010 .

A Frequency Domain Spherical Harmonics Solver for the Langevin Boltzmann Equation

Christoph Jungemann, Bernd Meinerzhagen, 2005 .

Physics-based hot-carrier degradation model for SiGe HBTs

Christoph Jungemann, Vincenzo d'Alessandro, Niccolo Rinaldi, 2016, 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Simulation of electronic noise in disordered organic semiconductor devices based on the master equation

Christoph Jungemann, C. Jungemann, 2015 .

Simulation of bipolar organic semiconductor devices based on the master equation including generation and recombination

Christoph Jungemann, Christoph Zimmermann, Weifeng Zhou, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress

Christoph Jungemann, Sung-Min Hong, T. V. Dinh, 2011 .

Numerical aspects of noise simulation in MOSFETs by a Langevin–Boltzmann solver

Christoph Jungemann, C. Jungemann, Dino Ruić, 2015 .

Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET

Tibor Grasser, Christoph Jungemann, Oliver Triebl, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle

Christoph Jungemann, Bernd Meinerzhagen, Matthias Bollhöfer, 2006 .

A fast k·p solver for hole inversion layers with an efficient 2D k-space discretization

Christoph Jungemann, Bernd Meinerzhagen, A. T. Pham, 2008 .

Deterministic Solvers for the Boltzmann Transport Equation

Christoph Jungemann, Sung-Min Hong, C. Jungemann, 2011 .