J.G. Fossum

发表

Design Optimization and Performance Projections of Double-Gate FinFETs With Gate–Source/Drain Underlap for SRAM Application

Seung-Hwan Kim, J.G. Fossum, 2007, IEEE Transactions on Electron Devices.

Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices With Gate–Source/Drain Underlap

Seung-Hwan Kim, J.G. Fossum, Ji-Woon Yang, 2006, IEEE Transactions on Electron Devices.

A Novel Two-Transistor Floating-Body/Gate Cell for Low-Power Nanoscale Embedded DRAM

Zhichao Lu, J.G. Fossum, L. Mathew, 2008, IEEE Transactions on Electron Devices.

The ITFET: A Novel FinFET-Based Hybrid Device

J.G. Fossum, L. Mathew, Weimin Zhang, 2006, IEEE Transactions on Electron Devices.

A physical model for the conductance of gated p-i-n switches

J.G. Fossum, R.J. McDonald, M.A. Shibib, 1985, IEEE Transactions on Electron Devices.

A Charge-Based Large-Signal Model for Thin-Film SOI MOSFET's

J.G. Fossum, Hyung Kyu Lim, 1985, IEEE Journal of Solid-State Circuits.

Analysis and control of hysteresis in PD/SOI CMOS

J.G. Fossum, G.O. Workman, M.M. Pelella, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Inverted T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45nm and beyond CMOS.

J.G. Fossum, G.O. Workman, S. Kalpat, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Performance Limitations of Deep-Submicron Fully Depleted Soi Mosfet's

J.G. Fossum, P.-C. Yeh, S. Krishnan, 1992, 1992 IEEE International SOI Conference.

Charge-control analysis of the COMFET turn-off transient

J.G. Fossum, R.J. McDonald, 1986, IEEE Transactions on Electron Devices.

Short-Channel Effects in Independent-Gate FinFETs

Zhichao Lu, J.G. Fossum, J. Fossum, 2007, IEEE Electron Device Letters.

LP-HP nanoscale FinFET-CMOS design via source/drain engineering

J.G. Fossum, L. Mathew, S. Chouksey, 2008, 2008 IEEE International SOI Conference.

Physical Insights on BJT-Based 1T DRAM Cells

Zhichao Lu, Zhenming Zhou, J.G. Fossum, 2009, IEEE Electron Device Letters.

Bulk inversion in FinFETs and implied insights on effective gate width

J.G. Fossum, V.P. Trivedi, Seung-Hwan Kim, 2005, IEEE Transactions on Electron Devices.

Significance of the channel—Charge partition in the transient MOSFET model

J.G. Fossum, S. Veeraraghavan, H. Jeong, 1986, IEEE Transactions on Electron Devices.

A hybrid FinFET/SOI MOSFET

J.G. Fossum, L. Mathew, W. Zhang, 2005, 2005 IEEE International SOI Conference Proceedings.

Physical modeling of high-current transients for bipolar transistor circuit simulation

J.G. Fossum, Hanggeun Jeong, 1987, IEEE Transactions on Electron Devices.

Multiple independent gate field effect transistor (MIGFET) - multi-fin RF mixer architecture, three independent gates (MIGFET-T) operation and temperature characteristics

J.G. Fossum, A. Vandooren, L. Mathew, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

DICE: A Beneficial Short-Channel Effect in Nanoscale Double-Gate MOSFETs

J.G. Fossum, S. Chouksey, 2008, IEEE Transactions on Electron Devices.

Kink-free SOI analog circuit design with floating-body/NFD MOSFETs

J.G. Fossum, D. Chang, M.M. Pelella, 1997, IEEE Electron Device Letters.

Transient drain current and propagation delay in SOI CMOS

J.G. Fossum, Hyung Kyu Lim, J. Fossum, 1984, IEEE Transactions on Electron Devices.

ITFET: Inverted T Channel FET, A Novel Device architecture and circuits based on the ITFET

J.G. Fossum, G.O. Workman, S. Kalpat, 2006, 2006 IEEE International Conference on IC Design and Technology.

A Simplified Superior Floating-Body/Gate DRAM Cell

J.G. Fossum, V.P. Trivedi, H.R. Harris, 2009, IEEE Electron Device Letters.

New Insights on “Capacitorless” Floating-Body DRAM Cells

Zhichao Lu, J.G. Fossum, V.P. Trivedi, 2007, IEEE Electron Device Letters.

On the feasibility of nanoscale triple-gate CMOS transistors

J.G. Fossum, Ji-Woon Yang, 2005, IEEE Transactions on Electron Devices.

An analytic characterization of weak-inversion drift current in a long-channel MOSFET

J.G. Fossum, Hyung-Kyu Lim, 1983, IEEE Transactions on Electron Devices.