H. Sakairi

Study on electron mobility model for AlN/GaN MIS-HEMTs with embedded source field-plate structures

R. Takahashi, K. Kurihara, H. Aoki, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Electron Mobility and Self-Heat Modeling of AlN/GaN MIS-HEMTs with Embedded Source Field-Plate Structures

K. Kurihara, N. Tsukiji, H. Sakairi, 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

High performance SiC trench devices with ultra-low ron

H. Sakairi, Y. Nakano, M. Aketa, 2011, 2011 International Electron Devices Meeting.