Robin Degraeve

发表

BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device

Zhichao Lu, Guido Groeseneken, Marc Aoulaiche, 2010, IEEE Electron Device Letters.

Stochastic Computing Based on Volatile GeSe Ovonic Threshold Switching Selectors

Robin Degraeve, Jian Fu Zhang, Wei Dong Zhang, 2020, IEEE Electron Device Letters.

Reliability issues inadvanced Highk/metal gatestacks for45nm CMOS applications

Guido Groeseneken, L. Pantisano, Marc Aoulaiche, 2006 .

Quantitative yield and reliability projection from antenna test results-a case study

B. Kaczer, Robin Degraeve, P. W. Mason, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

Distribution and generation of traps in SiO2/Al2O3 gate stacks

Philippe Roussel, Robin Degraeve, Bogdan Govoreanu, 2007, Microelectron. Reliab..

The defect-centric perspective of device and circuit reliability — From individual defects to circuits

Francky Catthoor, Dimitri Linten, Philippe Roussel, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance

Greg Hughes, Ben Kaczer, Robin Degraeve, 2005, Microelectron. Reliab..

Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

E. Vandamme, Guido Groeseneken, Ben Kaczer, 2000 .

GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator

Robin Degraeve, Jian Fu Zhang, Zheng Chai, 2020, IEEE Electron Device Letters.

A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

Guido Groeseneken, Robin Degraeve, Herman Maes, 1996 .

As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability

Robin Degraeve, Ingrid De Wolf, Y. Barbarin, 2014, Microelectron. Reliab..

Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 2002, Microelectron. Reliab..

Analysis of short-channel mosfet behavior after gate oxide breakdown and its impact on digital circuit reliability

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 2003 .

Cost-effective cleaning and high-quality thin gate oxides

Guido Groeseneken, D. Martin Knotter, Tanya Nigam, 1999, IBM J. Res. Dev..

Methodologies for sub-1nm EOT TDDB evaluation

Guido Groeseneken, Robin Degraeve, Philippe Roussel, 2011, 2011 International Reliability Physics Symposium.

A multi-bit/cell PUF using analog breakdown positions in CMOS

Ingrid Verbauwhede, Dimitri Linten, Guido Groeseneken, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions

Dimitri Linten, Steven Thijs, Guido Groeseneken, 2006, Microelectron. Reliab..

Scaling CMOS: Finding the gate stack with the lowest leakage current

Guido Groeseneken, Robin Degraeve, Herman Maes, 2005 .

On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers

Luigi Pantisano, Wilfried Vandervorst, Robin Degraeve, 2005, Microelectron. Reliab..

Relation between breakdown mode and location in short-channel nMOSFETs and its impact on reliability specifications

Guido Groeseneken, B. Kaczer, Robin Degraeve, 2001 .

Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current

C. Y. Chen, Guido Groeseneken, Robin Degraeve, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Investigation of the endurance of FE-HfO2 devices by means of TDDB studies

A. Subirats, Guido Groeseneken, Ben Kaczer, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit

Dimitri Linten, Philippe Roussel, Robin Degraeve, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).

A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF

Ingrid Verbauwhede, Dimitri Linten, Guido Groeseneken, 2018, IACR Trans. Cryptogr. Hardw. Embed. Syst..

A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS

Dimitri Linten, Robin Degraeve, E. Bury, 2019, IEEE Journal of Solid-State Circuits.

The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits

Dimitri Linten, Philippe Roussel, Tibor Grasser, 2016 .

A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS

Ingrid Verbauwhede, Dimitri Linten, Ben Kaczer, 2018, 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC).

Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability

Philippe Roussel, Guido Groeseneken, Ben Kaczer, 2007, Microelectron. Reliab..

High-resolution SILC measurements of thin SiO2 at ultra low voltages

Ben Kaczer, Robin Degraeve, Stefano Aresu, 2002, Microelectron. Reliab..

Analytic variability study of inference accuracy in RRAM arrays with a binary tree winner-take-all circuit for neuromorphic applications

Rudy Lauwereins, Wim Dehaene, Philippe Roussel, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).

Recent trends in the electrical characterization and reliability assessment of CMOS devices

Philippe Roussel, Guido Groeseneken, Jacopo Franco, 2012 .

A new method for the analysis of high-resolution SILC data

Ben Kaczer, Robin Degraeve, Stefano Aresu, 2003, Microelectron. Reliab..

The properties, effect and extraction of localized defect profiles from degraded FET characteristics

Guido Groeseneken, Jacopo Franco, Ben Kaczer, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Modeling and spectroscopy of ovonic threshold switching defects

Robin Degraeve, Andrea Fantini, Gouri Sankar Kar, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

Guido Groeseneken, Robin Degraeve, R. Bellens, 1998 .

Modeling the Impact of Reset Depth on Vacancy-Induced Filament Perturbations in ${\rm HfO}_{2}$ RRAM

Guido Groeseneken, Robin Degraeve, Malgorzata Jurczak, 2013, IEEE Electron Device Letters.

Origin of substrate hole current after gate oxide breakdown

Guido Groeseneken, Robin Degraeve, Ingrid De Wolf, 2002 .

First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device

Robin Degraeve, Malgorzata Jurczak, Andrea Fantini, 2016 .

Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

Guido Groeseneken, Luigi Pantisano, Tom Schram, 2006 .

Fast Ramped Voltage Characterization of Single Trap Bias and Temperature Impact on Time-Dependent $V_{\rm TH}$ Variability

Naoto Horiguchi, Aaron Thean, Robin Degraeve, 2014, IEEE Transactions on Electron Devices.

Ultra-thin oxide reliability: searching for the thickness scaling limit

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 2000 .

Investigation and Comparison of the Noise in the Gate and Substrate Current after Soft-Breakdown

Guido Groeseneken, Felice Crupi, Tanya Nigam, 1999 .

Electrical characterization of advanced gate dielectrics

Eddy Simoen, Guido Groeseneken, Ben Kaczer, 2007 .

Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Guido Groeseneken, Robin Degraeve, Malgorzata Jurczak, 2015 .

Electrical properties of Al2O3/ZrO2/Al2O3 gate stack in p-substrate metal oxide semiconductor devices

Guido Groeseneken, Ben Kaczer, Stefan De Gendt, 2003 .

Scalability of valence change memory: From devices to tip-induced filaments

Wilfried Vandervorst, Robin Degraeve, L. Goux, 2016 .

A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

Guido Groeseneken, Robin Degraeve, Herman Maes, 1995, Proceedings of International Electron Devices Meeting.

Hot carrier degradation and time-dependent dielectric breakdown in oxides

Guido Groeseneken, Tanya Nigam, Robin Degraeve, 1999 .

Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes

Philippe Roussel, Guido Groeseneken, Luigi Pantisano, 2003 .

A Study of Relaxation Current in

Guido Groeseneken, Luigi Pantisano, Marc Heyns, 2004 .

How far can we analyze oxide traps spatially with charge injection techniques

Philippe Roussel, Guido Groeseneken, Ben Kaczer, 2008 .

TID and Displacement Damage Resilience of 1T1R

Dimitri Linten, Nicholas C. Hooten, Robin Degraeve, 2014 .

Self-Limited Filament Formation and Low-Power Resistive Switching in CuxTe1-x/Al2O3/Si CBRAM Cell

Dirk Wouters, Robin Degraeve, Malgorzata Jurczak, 2011, 2011 3rd IEEE International Memory Workshop (IMW).

Electron energy dependence of defect generation in high-k gate stacks

Guido Groeseneken, Ben Kaczer, Luigi Pantisano, 2008 .

Mechanism for the generation of interface state precursors

Guido Groeseneken, Robin Degraeve, Jenny Zhang, 2000 .

Area scaling and voltage dependence of time-to-breakdown in magnetic tunnel junctions

Philippe Roussel, Guido Groeseneken, Robin Degraeve, 2002 .

Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution

Eddy Simoen, Robin Degraeve, Malgorzata Jurczak, 2018, IEEE Transactions on Electron Devices.

Simulation of the hot-carrier degradation in short channel transistors with high-K dielectric

Guido Groeseneken, Robin Degraeve, Xavier Aymerich, 2010 .

On the interface states generated under different stress conditions

David R. Burton, Michael J. Lalor, Guido Groeseneken, 2001 .

Interface state generation after hole injection

Guido Groeseneken, Robin Degraeve, Chun Zhao, 2001 .

Relation between hydrogen and the generation of interface state precursors

Guido Groeseneken, Robin Degraeve, Jenny Zhang, 1999 .

Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection

Guido Groeseneken, Luigi Pantisano, Robin Degraeve, 2007 .

Analysis of high voltage TDDB measurements on Ta2O5/SiO2 stack

Guido Groeseneken, Ben Kaczer, Marc Heyns, 1999 .

Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

Guido Groeseneken, Robin Degraeve, Xavier Aymerich, 2010 .

Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices.

Wilfried Vandervorst, Robin Degraeve, Malgorzata Jurczak, 2015, The journal of physical chemistry letters.

Statistical model for SILC and pre-breakdown current jumps in ultra-thin oxide layers

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 2001 .

In Depth Analysis of Post-Program VT Instability after Electrical Stress in 3D SONOS Memories

Dimitri Linten, Robin Degraeve, Antonio Arreghini, 2016, 2016 IEEE 8th International Memory Workshop (IMW).

RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application

Geert Van den bosch, Cor Claeys, Eddy Simoen, 2013 .

Two types of neutral electron traps generated in the gate silicon dioxide

David R. Burton, Guido Groeseneken, Robin Degraeve, 2002 .

Electrical and reliability characterization of metal-gate/HfO2/Ge FET's with Si passivation

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 2007 .

An inelastic quantum tunnelling model for current conduction after soft-breakdown

Guido Groeseneken, Felice Crupi, Tanya Nigam, 1998 .

Fast $V_{\rm TH}$ Transients After the Program/Erase of Flash Memory Stacks With High-$k$ Dielectrics

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 2011, IEEE Transactions on Electron Devices.

Hydrogen induced positive charge generation in gate oxides

Guido Groeseneken, Robin Degraeve, Jian Fu Zhang, 2001 .

Strong correlation between dielectric reliability and charge trapping in SiO2/Al2O3 gate stacks with TiN electrodes

Philippe Roussel, Guido Groeseneken, Luigi Pantisano, 2002 .

Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current

Giuseppe Iannaccone, Guido Groeseneken, Felice Crupi, 2001 .

Charge trapping in SiO 2 /HfO 2 gate dielectrics: comparison between charge-pumping and pulsed I D -V G

Guido Groeseneken, Luigi Pantisano, Robin Degraeve, 2004 .

Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 1999 .

The effect of externally imposed mechanical stress on the hot-carrier-induced degradation of deep-sub micron nMOSFET's

Guido Groeseneken, Robin Degraeve, I. De Wolf, 1997 .

On the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

Guido Groeseneken, Robin Degraeve, Herman Maes, 1996, Proceedings of International Reliability Physics Symposium.

High k dielectric materials prepared by atomic layer CVD

Richard Carter, Guido Groeseneken, Wilfried Vandervorst, 2001 .

On the mechanism of electron trap generation in gate oxides

David R. Burton, Michael J. Lalor, Guido Groeseneken, 2001 .

Effects of detrapping on electron traps generated in gate oxides

David R. Burton, Michael J. Lalor, Guido Groeseneken, 2003 .

High-k dielectrics for future generation memory devices (Invited Paper)

Christoph Adelmann, Ben Kaczer, Dirk Wouters, 2009 .

Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs

Naoto Horiguchi, Philippe Roussel, Guido Groeseneken, 2013, IEEE Transactions on Electron Devices.

Dependence of energy distributions of interface states on stress conditions

David R. Burton, Guido Groeseneken, Robin Degraeve, 2001 .

On the breakdown statistics and mechanisms in ultra-thin oxides and nitrided oxides

Guido Groeseneken, Robin Degraeve, Herman Maes, 1997 .

A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

Guido Groeseneken, Robin Degraeve, Xavier Aymerich, 2013 .

Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

Robin Degraeve, Malgorzata Jurczak, Andrea Fantini, 2014 .

A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique

Eddy Simoen, Philippe Roussel, Guido Groeseneken, 2010 .

Low voltage stress-induced leakage current in 1.4–2.1 nm SiON and HfSiON gate dielectric layers

Robin Degraeve, Thomas Kauerauf, Greg Hughes, 2005 .

Issues, achievements and challenges towards integration of high-k dielectrics

Richard Carter, Guido Groeseneken, L. Pantisano, 2002 .

Understanding Endurance in TiN/a-Si/TiOx/TiN RRAM Devices

Philippe Roussel, Robin Degraeve, Gouri Sankar Kar, 2018, 2018 IEEE International Memory Workshop (IMW).

Assessment of oxide reliability and hot carrier degradation in CMOS technology

Guido Groeseneken, Robin Degraeve, Herman Maes, 1998 .

Physical charge transport models for anomalous leakage current in floating gate-based nonvolatile memory cells

Robin Degraeve, D. Wellekens, P. Hendrickx, 2002 .

Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling

Robin Degraeve, J. Van Houdt, Pieter Blomme, 2015 .

Investigation of temperature acceleration of thin oxide time-to-breakdown

Guido Groeseneken, Ben Kaczer, Tanya Nigam, 1999 .

Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors

Robin Degraeve, Zheng Chai, Andrea Fantini, 2019, IEEE Electron Device Letters.

Statistical insight into controlled forming and forming free stacks for HfOx RRAM

Guido Groeseneken, Dirk Wouters, Robin Degraeve, 2013 .

Relation between hole traps and hydrogenous species in silicon dioxides

Guido Groeseneken, Robin Degraeve, H. K. Sii, 2002 .

Electrical Defects in Dielectrics for Flash Memories Studied by Trap Spectroscopy by Charge Injection and Sensing (TSCIS)

Geert Van den bosch, Guido Groeseneken, Ben Kaczer, 2009 .

Gate voltage dependence of reliability for ultra-thin oxides

Guido Groeseneken, Tanya Nigam, Marc Heyns, 1997 .

Weibull slope and voltage acceleration of ultra-thin (1.1-1.45 nm EOT) oxynitrides

Anabela Veloso, Guido Groeseneken, Ben Kaczer, 2004 .

Spectroscopic study of polysilicon traps by means of fast capacitance transients

Eddy Simoen, Guido Groeseneken, Ben Kaczer, 2013 .

Hole Trapping and Trap Generation in the Gate

Guido Groeseneken, Robin Degraeve, Jian Fu Zhang, 2001 .

Analysis of the kinetics for interface state generation following hole injection

Guido Groeseneken, Robin Degraeve, Jian Fu Zhang, 2003 .

On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers

Guido Groeseneken, Felice Crupi, Tanya Nigam, 1998 .

Temperature-accelerated breakdown in ultra-thin SiON dielectrics

Ben Kaczer, Robin Degraeve, Greg Hughes, 2004 .

Accurate reliability evaluation of non-uniform ultrathin oxynitride and high-k layers

Philippe Roussel, Guido Groeseneken, Luigi Pantisano, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Characteristics and Correlated Fluctuations of the Gate and Substrate Current after Oxide Soft-Breakdown

Guido Groeseneken, Felice Crupi, Tanya Nigam, 1998 .

Impact of process conditions on interface and high-κ trap density studied by variable Tcharge-Tdischarge charge pumping (VT2CP)

Guido Groeseneken, Robin Degraeve, M. B. Zahid, 2007 .

A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes

Guido Groeseneken, Felice Crupi, B. Kaczer, 2003 .

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Dirk Wouters, Robin Degraeve, Malgorzata Jurczak, 2011 .