Malgorzata Jurczak

发表

BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device

Zhichao Lu, Guido Groeseneken, Marc Aoulaiche, 2010, IEEE Electron Device Letters.

Cell Variability Impact on the One-Selector One-Resistor Cross-Point Array Performance

Guido Groeseneken, Malgorzata Jurczak, Stefan Cosemans, 2015, IEEE Transactions on Electron Devices.

Methodology for Design Optimization of SOI FinFET Grounded-Gate NMOS Devices

Mirko Scholz, Dimitri Linten, Rita Rooyackers, 2010, IEEE Transactions on Device and Materials Reliability.

One-Selector One-Resistor Cross-Point Array With Threshold Switching Selector

Guido Groeseneken, Malgorzata Jurczak, Stefan Cosemans, 2015, IEEE Transactions on Electron Devices.

Modeling RRAM SET and RESET statistics with guidelines for optimized operation

Guido Groeseneken, Dirk Wouters, Malgorzata Jurczak, 2013, VLSIT 2013.

Selector design considerations and requirements for 1 SIR RRAM crossbar array

Guido Groeseneken, Malgorzata Jurczak, Stefan Cosemans, 2014, 2014 IEEE 6th International Memory Workshop (IMW).

Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies

Dimitri Linten, Jonathan Borremans, Steven Thijs, 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

Material Aspects and Challenges for SOI FinFET Integration

Rita Rooyackers, Liesbeth Witters, Nadine Collaert, 2008 .

Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2013 .

SrTiO3 for sub-20 nm DRAM technology nodes—characterization and modeling

Zhigang Ji, Ben Kaczer, Malgorzata Jurczak, 2014 .

Comprehensive approach to MuGFET metrology

Rita Rooyackers, Philippe Leray, Shaunee Cheng, 2006, SPIE Advanced Lithography.

NEW SEMICONDUCTOR DEVICE COMBINING THE BENEFITS OF ARCHITECTURE AND MASS itself, AND METHOD

Malgorzata Jurczak, Thomas Skotnicki, 1999 .

Advanced FinFET Devices for Sub-32nm Technology Nodes: Characteristics and Integration Challenges

Rita Rooyackers, Anabela Veloso, Liesbeth Witters, 2009 .

Measurement and Analysis of Parasitic Capacitance in FinFETs with High-k Dielectrics and Metal-Gate Stack

Nadine Collaert, Malgorzata Jurczak, Kristin De Meyer, 2009, 2009 22nd International Conference on VLSI Design.

Complementary Role of Field and Temperature in Triggering ON/OFF Switching Mechanisms in ${\rm Hf}/{\rm HfO}_{2}$ Resistive RAM Cells

Malgorzata Jurczak, Dirk J. Wouters, Bogdan Govoreanu, 2013, IEEE Transactions on Electron Devices.

the semiconductor device combines the advantages of massive architectures and itself, manufacturing process

Thomas Skotnicki, Malgorzata Jurczak, Daniel Bois, 1999 .

Analysis of vertical cross-point resistive memory (VRRAM) for 3D RRAM design

Guido Groeseneken, Malgorzata Jurczak, Stefan Cosemans, 2013, 2013 5th IEEE International Memory Workshop.

Design methodology for FinFET GG-NMOS ESD protecction devices

Charvaka Duvvury, Mirko Scholz, Dimitri Linten, 2008 .

The Flash Memory Cell for the Nodes to Come: Material Requirements from a Device Perspective

Malgorzata Jurczak, Dirk Wellekens, Pieter Blomme, 2009 .

Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current

C. Y. Chen, Guido Groeseneken, Robin Degraeve, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Analysis of the effect of cell parameters on the maximum RRAM array size considering both read and write

Guido Groeseneken, Malgorzata Jurczak, Stefan Cosemans, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Challenges and solutions for ESD protection in advanced logic and RF CMOS technologies

Mirko Scholz, Dimitri Linten, Steven Thijs, 2008 .

Session #7 Multi-gate SOI device

Malgorzata Jurczak, Wade Xiong, 2008, 2008 IEEE International SOI Conference.

Conductive filaments multiplicity as a variability factor in CBRAM

Wilfried Vandervorst, Malgorzata Jurczak, Ludovic Goux, 2015, 2015 IEEE International Reliability Physics Symposium.

Selectors for high density crosspoint memory arrays: Design considerations, device implementations and some challenges ahead

Malgorzata Jurczak, Leqi Zhang, Bogdan Govoreanu, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Noise analysis inadvanced memory devices

Cor Claeys, Eddy Simoen, Gino Giusi, 2015 .

Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM

Malgorzata Jurczak, Andrea Fantini, Ludovic Goux, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

acoustic transmitter and receiver integrated, and method of manufacture corresponding

Thomas Skotnicki, Malgorzata Jurczak, Herve Jaouen, 2000 .

Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems

Dirk Wouters, Malgorzata Jurczak, Jorge Kittl, 2013 .

Modeling the Impact of Reset Depth on Vacancy-Induced Filament Perturbations in ${\rm HfO}_{2}$ RRAM

Guido Groeseneken, Robin Degraeve, Malgorzata Jurczak, 2013, IEEE Electron Device Letters.

First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device

Robin Degraeve, Malgorzata Jurczak, Andrea Fantini, 2016 .

Reduction of gate-to-channel tunneling current in FinFET structures

Denis Flandre, Nadine Collaert, Malgorzata Jurczak, 2007 .

Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Guido Groeseneken, Robin Degraeve, Malgorzata Jurczak, 2015 .

Denis Flandre, Jean-Pierre Raskin, Nadine Collaert, 2007 .

Novel dual layer floating gate structure as enabler of fully planar flash memory

Tom Schram, Malgorzata Jurczak, Pieter Blomme, 2010, 2010 Symposium on VLSI Technology.

Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems

Luigi Pantisano, Dirk Wouters, Malgorzata Jurczak, 2011 .

Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals

Malgorzata Jurczak, Zhigang Ji, Jian Fu Zhang, 2017, IEEE Transactions on Electron Devices.

Integration of tall triple-gate devices with inserted TaxNy gate in a 0.274µm2 6T-SRAM cell and advanced CMOS logic circuits

Vincent Wiaux, Geert Vandenberghe, Patrick Jaenen, 2005 .

Probing doping conformality in fin shaped field effect transistor structures using resistors

Wilfried Vandervorst, Malgorzata Jurczak, Ray Duffy, 2008 .

TID and Displacement Damage Resilience of 1T1R

Dimitri Linten, Nicholas C. Hooten, Robin Degraeve, 2014 .

Spacer defined FinFET: Active area patterning of sub-20nm fins with high density

Rita Rooyackers, Denis Shamiryan, Nadine Collaert, 2007 .

Self-Limited Filament Formation and Low-Power Resistive Switching in CuxTe1-x/Al2O3/Si CBRAM Cell

Dirk Wouters, Robin Degraeve, Malgorzata Jurczak, 2011, 2011 3rd IEEE International Memory Workshop (IMW).

Dynamic Modeling of Radiation-Induced State Changes in ${\hbox {HfO}_2}/\hbox {Hf}$ 1T1R RRAM

Dimitri Linten, Nicholas C. Hooten, En Xia Zhang, 2014, IEEE Transactions on Nuclear Science.

Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution

Eddy Simoen, Robin Degraeve, Malgorzata Jurczak, 2018, IEEE Transactions on Electron Devices.

Filament observation in metal-oxide resistive switching devices

Guido Groeseneken, Dirk Wouters, Wilfried Vandervorst, 2013 .

Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications

Guido Groeseneken, Christoph Adelmann, Malgorzata Jurczak, 2014, IEEE Electron Device Letters.

All-nanocellulose nonvolatile resistive memory

Gang Meng, Wilfried Vandervorst, Malgorzata Jurczak, 2016 .

SrTiOx for sub-20nm DRAM technology nodes-Characterization and modeling

B. Kaczer, Malgorzata Jurczak, Zhigang Ji, 2015 .

Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory

Gang Meng, Wilfried Vandervorst, Malgorzata Jurczak, 2014, Scientific Reports.

Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices.

Wilfried Vandervorst, Robin Degraeve, Malgorzata Jurczak, 2015, The journal of physical chemistry letters.

Scanning probe microscopy as a scalpel to probe filament formation in conductive bridging memory devices

Wilfried Vandervorst, Malgorzata Jurczak, Ludovic Goux, 2014 .

Vanadium dioxide for selector applications

Iuliana Radu, Stefan De Gendt, Marc Heyns, 2013 .

Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques

Naoto Horiguchi, Denis Shamiryan, Malgorzata Jurczak, 2011 .

Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics

Eddy Simoen, C. Claeys, Marc Aoulaiche, 2014 .

Reduction of the anomalous VT behavior in MOSFETs with high-κ/metal gate stacks

Luigi Pantisano, Nadine Collaert, Malgorzata Jurczak, 2007 .

Understanding and optimizing the floating body retention in FDSOI UTBOX

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2016 .

Transient Thermometry and High-Resolution Transmission Electron Microscopy Analysis of Filamentary Resistive Switches.

Malgorzata Jurczak, Andrea Fantini, Marek Skowronski, 2016, ACS applied materials & interfaces.

Impact of fin width on digital and analog performances of n-FinFETs

Willy Sansen, S. Decoutere, Guido Groeseneken, 2007 .

The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

Iuliana Radu, Malgorzata Jurczak, Hugo Bender, 2012 .

Mobility characterization in FinFETs using split C-V technique

Denis Flandre, Rita Rooyackers, Jean-Pierre Raskin, 2005 .

Optimization of FinFET geometries for analog performance

Willy Sansen, Guido Groeseneken, Nadine Collaert, 2006 .

Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth

Rita Rooyackers, Nadine Collaert, Malgorzata Jurczak, 2008 .

NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectrics

Rita Rooyackers, Wim Deweerd, Tom Schram, 2005 .

Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.

Wilfried Vandervorst, Malgorzata Jurczak, Hugo Bender, 2014, Nano letters.

Dynamic modeling of radiation induced state change in HfO2/Hf 1T1R RRAM

Dimitri Linten, Nicholas C. Hooten, En Xia Zhang, 2014 .

High-drive current (>1MA/cm2) and highly nonlinear (>103) TiN/amorphous-Silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance

Guido Groeseneken, Christoph Adelmann, Malgorzata Jurczak, 2014, 2014 IEEE International Electron Devices Meeting.

A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology

Malgorzata Jurczak, J. Van Houdt, Laurent Breuil, 2011 .

Study of amorphous Cu–Te–Si thin films showing high thermal stability for application as a cation supply layer in conductive bridge random access memory devices

Malgorzata Jurczak, Ludovic Goux, Karl Opsomer, 2016 .

A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell

Malgorzata Jurczak, Nancy Heylen, Andrea Fantini, 2013, IEEE Transactions on Electron Devices.

Introduction of WO3 Layer in a Cu-Based Al2O3 Conductive Bridge RAM System for Robust Cycling and Large Memory Window

Hyunsang Hwang, Malgorzata Jurczak, Ludovic Goux, 2016, IEEE Journal of the Electron Devices Society.

Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode

Denis Flandre, Tamara Rudenko, Nadine Collaert, 2005 .

On the Optimal ON/OFF Resistance Ratio for Resistive Switching Element in One-Selector One-Resistor Crosspoint Arrays

Guido Groeseneken, Malgorzata Jurczak, Stefan Cosemans, 2015, IEEE Electron Device Letters.

Hf Cap Thickness Dependence in Bipolar-Switching TiN\HfO2\Hf\TiN RRAM Device

Guido Groeseneken, Dirk Wouters, Malgorzata Jurczak, 2013 .

Gate-source-drain architecture impact on DC and RF performance of sub-100-nm elevated source/drain NMOS transistors

Emmanuel Augendre, Dimitri Linten, Rita Rooyackers, 2003 .

High-k dielectrics for future generation memory devices (Invited Paper)

Christoph Adelmann, Ben Kaczer, Dirk Wouters, 2009 .

Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

Robin Degraeve, Malgorzata Jurczak, Andrea Fantini, 2014 .

A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique

Eddy Simoen, Philippe Roussel, Guido Groeseneken, 2010 .

Specific features of multiple-gate MOSFET threshold voltage and subthreshold slope behavior at high temperatures

Denis Flandre, Nadine Collaert, Malgorzata Jurczak, 2007 .

Oxygen chemical potential optimization for low current (<10µA) resistive switching in oxide-based RRAM

Guido Groeseneken, Malgorzata Jurczak, Andrea Fantini, 2016 .

Tall triple-gate device with TiN/HfO2 gate stack

Paul Zimmerman, Tom Schram, Stefan De Gendt, 2005 .

Thin-Silicon Injector (TSI): An All-Silicon Engineered Barrier, Highly Nonlinear Selector for High Density Resistive RAM Applications

Christoph Adelmann, Malgorzata Jurczak, Hubert Hody, 2015, 2015 IEEE International Memory Workshop (IMW).

Statistical insight into controlled forming and forming free stacks for HfOx RRAM

Guido Groeseneken, Dirk Wouters, Robin Degraeve, 2013 .

Towards barrier height modulation in HfO2/TiN by oxygen scavenging - Dielectric defects or metal induced gap states?

L. Pantisano, Dirk Wouters, Malgorzata Jurczak, 2011 .

On the Variability of the Low-Frequency Noise in UTBOX SOI nMOSFETs

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2012 .

Electrical Defects in Dielectrics for Flash Memories Studied by Trap Spectroscopy by Charge Injection and Sensing (TSCIS)

Geert Van den bosch, Guido Groeseneken, Ben Kaczer, 2009 .

Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations

Liang Zhao, Malgorzata Jurczak, Yoshio Nishi, 2015 .

Geometry Dependence of 1/f Noise in n‐ and p‐channel MuGFETs

Willy Sansen, S. Decoutere, Guido Groeseneken, 2005 .

Invited) Vanadium Dioxide for Selector Applications

Iuliana Radu, Stefan De Gendt, Marc Heyns, 2013 .

The etchback approach: Enlarged process window for MuGFET gate etching

Rita Rooyackers, Nadine Collaert, Malgorzata Jurczak, 2006 .

Role of holes and electrons during erase of TANOS memories: Evidences for dipole formation and its impact on reliability

Malgorzata Jurczak, Antonio Arreghini, Geert Van den bosch, 2010, 2010 IEEE International Reliability Physics Symposium.

Dielectric quality and reliability of FUSI/HfSiON devices with process induced strain

Eddy Simoen, Guido Groeseneken, Ben Kaczer, 2007 .

Correlation of fin shape fluctuations to FinFET electrical variability and noise margins of 6-T SRAM cells

Malgorzata Jurczak, Luca De Marchi, Emanuele Baravelli, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

Extensive reliability investigation of a-VMCO nonfilamentary RRAM: Relaxation, retention and key differences to filamentary switching

Malgorzata Jurczak, Bogdan Govoreanu, Yangyin Chen, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Electrical and material evaluation of the MOCVD TiN as metal gate electrode for advanced CMOS technology

Tom Schram, Stefan De Gendt, Malgorzata Jurczak, 2006 .

Excellent Roff/Ron ratio and short programming time in Cu/Al2O3-based conductive-bridging RAM under low-current (10 μA) operation

Malgorzata Jurczak, Andrea Fantini, Michel Houssa, 2016 .

Electrical Characterization and Special Properties of FINFET Structures

Denis Flandre, Tamara Rudenko, Nadine Collaert, 2006 .

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Dirk Wouters, Robin Degraeve, Malgorzata Jurczak, 2011 .

Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells.

Wilfried Vandervorst, Malgorzata Jurczak, Hugo Bender, 2013, ACS applied materials & interfaces.