H Gossner

Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multilevel TLP

D Pogany, D Johnsson, S Bychikhin, 2011, IEEE Transactions on Electron Devices.

Toward System on Chip (SoC) Development Using FinFET Technology: Challenges, Solutions, Process Co-Development & Optimization Guidelines

H Gossner, M Shrivastava, R Mehta, 2011, IEEE Transactions on Electron Devices.

Part I: On the Behavior of STI-Type DeNMOS Device Under ESD Conditions

H Gossner, M Shrivastava, M S Baghini, 2010, IEEE Transactions on Electron Devices.

Part II: On the Three-Dimensional Filamentation and Failure Modeling of STI Type DeNMOS Device Under Various ESD Conditions

H Gossner, M Shrivastava, M S Baghini, 2010, IEEE Transactions on Electron Devices.

An Insight Into the ESD Behavior of the Nanometer-Scale Drain-Extended NMOS Device—Part I: Turn-On Behavior of the Parasitic Bipolar

H Gossner, M Shrivastava, M. Shrivastava, 2011, IEEE Transactions on Electron Devices.