Douglas C. Oakley

InGaAsP/InP quantum-well electrorefractive modulators with sub-volt Vpi

Paul W. Juodawlkis, Frederick J. O'Donnell, Robert J. Bailey, 2004, SPIE Defense + Commercial Sensing.

Wafer-scale 3D integration of InGaAs image sensors with Si readout circuits

Douglas C. Oakley, Joseph P. Donnelly, Craig L. Keast, 2009, 2009 IEEE International Conference on 3D System Integration.

Arrays of III-V semiconductor Geiger-mode avalanche photodiodes

Douglas C. Oakley, Joseph P. Donnelly, George W. Turner, 2003, The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..

Toward All MOCVD Grown InAs/GaAs Quantum Dot Laser on CMOS-compatible (001) Silicon

Douglas C. Oakley, Jonathan Klamkin, Bowen Song, 2019, 2019 Conference on Lasers and Electro-Optics (CLEO).

Scaling of dark count rate with active area in 1.06μm photon-counting InGaAsP∕InP avalanche photodiodes

Frederick J. O'Donnell, Douglas C. Oakley, Joseph P. Donnelly, 2006 .

High-Quality 150 mm InP-to-Silicon Epitaxial Transfer for Silicon Photonic Integrated Circuits

David Chapman, Di Liang, John E. Bowers, 2009 .

Afterpulsing in Geiger-mode avalanche photodiodes for 1.06μm wavelength

Simon Verghese, Douglas C. Oakley, Joseph P. Donnelly, 2006 .

Widely tunable single-mode quantum cascade laser source for mid-infrared spectroscopy

David Chapman, Scott W. Corzine, Federico Capasso, 2007 .

Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy

Douglas C. Oakley, G. W. Charache, H. Choi, 1998 .

Uniformity study of wafer-scale InP-to-silicon hybrid integration

David Chapman, Di Liang, John E. Bowers, 2011 .

150 mm InP-to-Silicon Direct Wafer Bonding for Silicon Photonic Integrated Circuits

David Chapman, Di Liang, John E. Bowers, 2008 .

Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III–V Compound Semiconductors-to-Silicon Photonic Integrated Circuits

Di Liang, John E. Bowers, Douglas C. Oakley, 2008 .