Robert Allen Sadler

A monolithic L-band limiting amplifier and dual-modulus prescaler GaAs integrated circuit

H. P. Singh, Inder J. Bahl, G. K. Lewis, 1988, 1988., IEEE MTT-S International Microwave Symposium Digest.

The Development of AN Individualized Course in Semiconductor Electronics for Physical Scientists.

Robert Allen Sadler, 1975 .

A Refractory Self-Aligned Gate Process for Monolithically Combined Microwave and Digital GaAs ICs

H. P. Singh, Inder J. Bahl, Edward L. Griffin, 1987, 1987 IEEE MTT-S International Microwave Symposium Digest.

Integrated digitally controlled 6-bit phase shifter, 4-bit attenuator, and T/R switch using multifunction self aligned gate process

J. F. Naber, H. P. Singh, C. Andricos, 1991, IEEE 1991 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.

High-speed GaAs multipliers fabricated with a high-yield 0.4- mu m process

Robert Allen Sadler, G. D. Studtmann, R. Sadler, 1993 .

A new refractory self-aligned gate technology for GaAs microwave power FETs and MMICs

Inder J. Bahl, Edward L. Griffin, A. E. Geissberger, 1988 .

TiW nitride thermally stable Schottky contacts to GaAs: Characterization and application to self‐aligned gate field‐effect transistor fabrication

A. E. Geissberger, Robert Allen Sadler, M. L. Balzan, 1987 .

Refractory self-aligned gate technology for GaAs microwave FETs and MMICS

Inder J. Bahl, Edward L. Griffin, A. E. Geissberger, 1987 .