Hitoshi Sato

发表

Metal-semiconductor transition of mineral tetrahedrite Cu12Sb4S13 investigated by photoemission and soft x-ray absorption spectroscopies

Shogo Nakamura, Masahiro Sawada, Masaki Taniguchi, 2016 .

Hard X-ray Photoemission Study on Temperature-Induced Valence Transition of Eu(Rh1-xIrx)2Si2

Masaki Taniguchi, T Matsumoto, A Rousuli, 2016 .

Core-level and valence-band electron states in Zr-based bulk metallic glass

Wei Zhang, Akihisa Inoue, Hitoshi Sato, 2009 .

Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition

Mathew C. Schmidt, James S. Speck, Shuji Nakamura, 2007 .

An Investigation on the Behavior of Laser Induced Bubble in Cryogenic Liquid Nitrogen

Kazuo Maeno, Hitoshi Sato, K. Maeno, 1996 .

Acceleration of the gradual degradation in (GaAl)As double‐heterostructure lasers as an exponent of the value of the driving current

Naoki Chinone, Ryoichi Ito, Hitoshi Sato, 1979 .

Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs

Mathew C. Schmidt, James S. Speck, Shuji Nakamura, 2007 .

Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

James S. Speck, Shuji Nakamura, Makoto Saito, 2008 .

High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes

Mathew C. Schmidt, James S. Speck, Shuji Nakamura, 2007 .