Mark Rodder

Applicability of RTCVD and LPCVD nitride spacers for sub-0.18-μm CMOS technologies

Wei-Tsun Shiau, Jerry C. Hu, Mark Rodder, 1997, Advanced Lithography.

Microelectronic Device Technology : 1-2 October 1997, Austin, Texas

Dirk Wristers, Mark Rodder, Tsuchiya Toshiaki, 1997 .

Prediction of CMOS transistor performance at 0.10-μm gate length using tuned simulations

Mark Rodder, Ih-Chin Chen, Manoj Mehrotra, 1997, Advanced Lithography.

Tuned MEDICI simulator including inverse short channel effect for sub-0.18-μm CMOS technologies

Wei-Tsun Shiau, Jerry C. Hu, Mark Rodder, 1997, Advanced Lithography.

Scalability of conventional and sidewall-sealed LOCOS technology for 256-Mbit DRAM array and periphery isolation

Mark Rodder, Ih-Chin Chen, Jeong-Mo Hwang, 1996, Advanced Lithography.

Improved figure-of-merit metric for CMOS transistor performance and its application to 0.25 um CMOS technologies

Amitava Chatterjee, Mark Rodder, Ih-Chin Chen, 1995, Advanced Lithography.

Remote plasma nitrided oxides for ultrathin gate dielectric applications

Amitava Chatterjee, Wei-Tsun Shiau, Jerry C. Hu, 1998, Advanced Lithography.

Evaluation of Mo-doped Ti salicide process for sub-0.18-μm CMOS

Wei-Tsun Shiau, Mark Rodder, Ih-Chin Chen, 1998, Advanced Lithography.