S. Kakimoto

Self-corrective device and architecture to ensure LSI operation at 0.5 V using bulk dynamic threshold MOSFET with a self-adaptive power supply

K. Kimoto, K. Fujimoto, K. Kawashima, 2003, 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..

High-power high-reliability operation of 1.3-μm p-substrate buried crescent laser diodes

Y. Sakakibara, Y. Nakajima, Hirofumi Namizaki, 1987 .

Uncooled DFB lasers for CATV

Hitoshi Watanabe, Tatsuo Hatta, Kimitaka Shibata, 1997, Photonics West.

Extremely low-threshold 1.3 μm GaInAsP/InP DFB PPIBH laser

Y. Ohkura, A. Takemoto, S. Kakimoto, 1988 .

1.3- mu m distributed feedback laser diode with a grating accurately controlled by a new fabrication technique

Y. Ohkura, A. Takemoto, W. Susaki, 1989 .

High-power high-reliability operation of 1.3 µm p-substrate buried crescent laser diodes

Y. Kokubo, Hirofumi Namizaki, S. Kakimoto, 1987 .

1.3μm InGaAsP/InP distributed-feedback P-substrate partially inverted buried-heterostructure laser diode

Akira Takemoto, M. Fujiwara, Hirofumi Namizaki, 1987 .

1.3 mu m distributed feedback laser diode with grating accurately controlled by new fabrication technique

Y. Ohkura, A. Takemoto, W. Susaki, 1989 .