F. Volpi

发表

Study of Ti-Rich and Al-Rich Contact Metallization for AlGaN/GaN HEMT Power Devices

A. Torres, Murielle Fayolle, Dimitri Bertrand, 2014 .

Real-Time QoS DiffServ Gateway Implementation for Satellite IP Networks

Romano Fantacci, Luca Simone Ronga, Tommaso Pecorella, 2002 .

High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal-organic precursor TBTDET

A. Bajolet, L. Pinzelli, F. Volpi, 2007, Microelectron. Reliab..

XPS studies of the ALD-growth of TaN diffusion barriers: Impact of the dielectric surface chemistry on the growth mechanism

Elisabeth Blanquet, F. Volpi, Nicolas Jourdan, 2008 .

Identification of the (√E+1/E)-dependence of porous low-k time dependent dielectric breakdown using over one year long package level tests

X. Federspiel, David Roy, F. Volpi, 2013 .

PEALD ZrO2 Films Deposition on TiN and Si Substrates

E. Deloffre, Christophe Wyon, Elisabeth Blanquet, 2009 .

Copper line topology impact on the SiOCH low-k reliability in sub 45nm technology node. From the time-dependent dielectric breakdown to the product lifetime

F. Volpi, C. Monget, M. Vilmay, 2009, 2009 IEEE International Reliability Physics Symposium.

Characterization of low-k SiOCH dielectric for 45nm technology and link between the dominant leakage path and the breakdown localization

David Roy, F. Volpi, D. Roy, 2008 .

Elastic properties of tensile nitrogen-plasma-treated multilayer silicon nitride films

F. Volpi, Muriel Braccini, Daniel Benoit, 2014 .

Copper-Line Topology Impact on the Reliability of SiOCH Low- $k$ for the 45-nm Technology Node and Beyond

F. Volpi, C. Monget, M. Vilmay, 2008, IEEE Transactions on Device and Materials Reliability.

Capacitance variation under electrical stress of SiOCH low-k dielectrics for the advanced 45nm technology node and beyond

F. Volpi, S. Blonkowski, M. Vilmay, 2009, 2009 IEEE International Integrated Reliability Workshop Final Report.

Characterisation of silicon nitride thin films used as stressor liners on CMOS FETs

F. Volpi, M. Braccini, P. Morin, 2008, 2008 9th International Conference on Ultimate Integration of Silicon.

Key Process steps for high reliable SiOCH low-k dielectrics for the sub 45nm technology nodes

L. Arnaud, S. Chhun, C. Besset, 2009, 2009 IEEE International Interconnect Technology Conference.

Sb segregation in Si and SiGe: effect on the growth of self-organised Ge dots

F. Volpi, Isabelle Berbezier, P. Gas, 2000 .

Morphological evolution of SiGe layers

F. Volpi, Isabelle Berbezier, I. Berbezier, 2003 .