V. P. Kuznetsov

发表

Synthesis of linear detectors when the signal is inexactly given and the properties of the normal noise are incompletely known

V. P. Kuznetsov, 1974 .

V. P. Kuznetsov, Boris A. Andreev, Z. F. Krasilnik, 2002, Feofilov Symposium on Spectropscopy of Crystals Activated by Rare-Earth and Transition Metal Ions.

Stable method of discriminating between two signals

V. P. Kuznetsov, 1974 .

An X-ray Radiometric Technique Developed for Determining Principal Stresses in Gas and Oil Pipelines Following Shot-Blasting Treatment

V. P. Kuznetsov, V. I. Bochenin, V. I Moshkin, 2005 .

Experimental investigations of the reactive strength of soil in the bed of a circular footing subjected to short-term dynamic loads

V. P. Kuznetsov, G. V. Rykov, 1990 .

Compact high-power MHD electric station on natural gas

V. P. Kuznetsov, S. A. Lavkovsky, Evgeny Pavlovich Velikhov, 1998 .

Experience in using devices for voltage control under load in working transformers for in-house needs of energy generating units

V. P. Kuznetsov, A. P. Gostev, S. G. Savel'ev, 1982 .

Erbium Doped Silicon Single- and Multilayer Structures for LED and Laser Applications

Tom Gregorkiewicz, V. P. Kuznetsov, Z. F. Krasilnik, 2005 .

Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping

V. P. Kuznetsov, D. I. Kryzhkov, Z. Krasilnik, 2012 .

Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method

V. P. Kuznetsov, I. Yassievich, M. S. Bresler, 2001 .

Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy

V. P. Kuznetsov, V. N. Shabanov, A. V. Kornaukhov, 2008 .

Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes p+/n+/n-Si:Er

V. P. Kuznetsov, V. B. Shmagin, V. Kozlov, 2010 .

Realization of photo- and electroluminescent Si:Er structures by the method of sublimation molecular beam epitaxy

V. P. Kuznetsov, V. N. Shabanov, V. B. Shmagin, 2002 .

Properties of optically active Si:Er and Si1-xGex layers grown by the sublimation MBE method

V. P. Kuznetsov, V. B. Shmagin, V. Shengurov, 2000 .

Electroluminescence at 1.54 μm in Si:Er/Si structures grown by sublimation molecular-beam epitaxy

V. P. Kuznetsov, V. N. Shabanov, O. Belova, 2006 .

Crystal lattice defects and Hall mobility of electrons in Si: Er/Si layers grown by sublimation molecular-beam epitaxy

V. P. Kuznetsov, V. N. Shabanov, A. P. Kasatkin, 2005 .

Special features of the sublimational molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures

V. P. Kuznetsov, R. Rubtsova, 2000 .

Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

V. P. Kuznetsov, V. B. Shmagin, A. V. Kornaukhov, 2011 .

1.54μm Si:Er light emitting diode with memory function

V. P. Kuznetsov, D. I. Kryzhkov, T. Gregorkiewicz, 2006 .

Effect of the p-n junction breakdown mechanism on the Er3+ ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy

V. P. Kuznetsov, V. N. Shabanov, D. I. Kryzhkov, 2004 .

Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique

V. P. Kuznetsov, D. I. Kryzhkov, V. B. Shmagin, 2003 .

Electrically active centers in Si:Er light-emitting layers grown by sublimation molecular-beam epitaxy

V. P. Kuznetsov, V. B. Shmagin, C. Ammerlaan, 2002 .

Electrically active centers in light emitting Si : Er/Si structures grown by the sublimation MBE method

V. P. Kuznetsov, D. I. Kryzhkov, V. B. Shmagin, 2001 .

Erbium ion electroluminescence in p++/n+/n-Si:Er/n++ silicon diode structures

V. P. Kuznetsov, V. N. Shabanov, V. B. Shmagin, 2007 .

Characteristics of a Si dual-band detector responding in both near- and very-long-wavelength-infrared regions

V. P. Kuznetsov, V. Gavrilenko, Hui C. Liu, 2006 .

Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL

V. P. Kuznetsov, D. I. Kryzhkov, Z. Krasilnik, 2009 .

Features of erbium nonradiative deexcitation and electroluminescence temperature quenching in sublimation MBE-grown Si:Er/Si diode structures

V. P. Kuznetsov, V. B. Shmagin, Z. Krasilnik, 2009 .

Photoluminescence excitation spectroscopy of erbium in epitaxially grown Si:Er structures

V. P. Kuznetsov, T. Gregorkiewicz, Z. Krasilnik, 2005 .

Optical Er-doping of Si during sublimational molecular beam epitaxy

V. P. Kuznetsov, V. B. Shmagin, H. Hutter, 1999 .

Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy

V. P. Kuznetsov, V. B. Shmagin, M. Drozdov, 1999 .

Molecular and crystal structures of chiral 2-(4-phenylbenzylidene)-3-methyl-6-isopropylcyclohexanone 6-bromo derivative

V. P. Kuznetsov, V. I. Kulishov, L. Kutulya, 2001 .

Structure of 4,5-(pentasulfane-1,5-diyl)-1,3-dithiole-2-thione

V. P. Kuznetsov, O. Dyachenko, V. Starodub, 1993 .

Non-equilibrium microstructure of the (110) vicinal surface of Si during MBE

V. P. Kuznetsov, M. Vasilevskiy, H. Sitter, 1997 .

Structure of 2-(iminocoumar-3-yl)-4-(coumar-3-yl)-thiazole, C2lHl4N2O3S†‡

V. P. Kuznetsov, E. Lakin, V. Baumer, 1993 .

Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications

V. P. Kuznetsov, D. I. Kryzhkov, N. Vinh, 2006 .

A microkinetic model for doping of silicon layers during molecular-beam epitaxy

V. P. Kuznetsov, M. Vasilevskiy, A. Andreev, 1993 .

Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures

V. P. Kuznetsov, D. I. Kryzhkov, Z. Krasilnik, 2010 .

Difference in the IR absorption of thermal donors in n-Si and p-Si

V. P. Kuznetsov, V. Fedorov, M. A. Il’in, 1985 .

Heavily doped Si layers grown by molecular beam epitaxy in vacuum

V. P. Kuznetsov, O. Kuznetsov, N. Gudkova, 1991 .

Properties of optically active Si:Er and Si1−xGex layers grown by the sublimation MBE method: [Thin Solid Films 369 (2000) 320–323] ;

V. P. Kuznetsov, V. Shengurov, Z. Krasilnik, 2001 .

OPTICALLY ACTIVE SI:ER LAYERS GROWN BY THE SUBLIMATION MBE METHOD

V. P. Kuznetsov, H. Hutter, Z. Krasilnik, 1998 .

Uniformly and selectively doped silicon:erbium structures produced by the sublimation MBE method

V. P. Kuznetsov, Z. Krasilnik, M. Stepikhova, 2001 .

Er-Doped Electro-Optical Memory Element for 1.5-$\mu$ m Silicon Photonics

V. P. Kuznetsov, D. I. Kryzhkov, T. Gregorkiewicz, 2006, IEEE Journal of Selected Topics in Quantum Electronics.

Erbium photoluminescence excitation spectroscopy in Si: Er epitaxial structures

V. P. Kuznetsov, A. N. Yablonsky, T. Gregorkiewicz, 2005 .

Er3+ photoluminescence excitation spectra in erbium-doped epitaxial silicon structures

V. P. Kuznetsov, D. I. Kryzhkov, T. Gregorkiewicz, 2004 .

Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy

V. P. Kuznetsov, A. V. Kornaukhov, D. Filatov, 2011 .