S. M. Jang

Accurate in-line CD metrology for nanometer semiconductor manufacturing

M. S. Liang, Jyu-Horng Shieh, Baw-Ching Perng, 2006, SPIE Advanced Lithography.

Pattern dependence study of copper planarization using linear polisher for 0.13 /spl mu/m applications

Mong-Song Liang, S. M. Jang, L. K. Huang, 2001, Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).

Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs

S. M. Jang, Kuo-Nan Yang, Y. M. Lin, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate

C. H. Chen, S. M. Jang, K. Y. Lee, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides

Mong-Song Liang, S. M. Jang, Ming-Chin Chang, 2000 .

Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs

Douglas Yu, S. M. Jang, Douglas C. H. Yu, 2001 .