Takashi Egawa

发表

Technology of Steel Structure in Niigata - Sendai Gas Pipeline Project

Takashi Egawa, Hideaki Sugai, Takami Murase, 1995 .

Optoelectronic Integrated Circuits Grown on Si Substrates (Special Issue on Opto-Electronics and LSI)

Masayoshi Umeno, Takashi Egawa, Takashi Jimbo, 1993 .

DC-AC inverter with Heterodyne Technique and GaN power device

Makoto Iwasaki, Takashi Kosaka, Hideki Jonokuchi, 2016, 2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES).

Guest Editorial Special Issue on GaN Electronic Devices

Giovanni Ghione, Gaudenzio Meneghesso, Ruediger Quay, 2013 .

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Effects of device passivation on AlGaN/GaN HEMTs using electron beam evaporated SiO2 and Si3N4 (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)

Takashi Jimbo, A. Imanishi, S. Arulkumaran, 2003 .

Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2005 .

Room-temperature continuous-wave operation of AlGaAs-GaAs single-quantum-well lasers on Si by metalorganic chemical-vapor deposition using AlGaAs-AlGaP intermediate layers

Takashi Jimbo, Tetsuo Soga, Masayoshi Umeno, 1991 .

Optical degradation of InGaN/AlGaN light‐emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 1996 .

GaAs-based LED on Si substrate with GaAs islands active region by droplet-epitaxy

Takashi Jimbo, Masayoshi Umeno, Takashi Egawa, 1996 .

Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐Si

Yuya Yamaoka, Takashi Egawa, Joseph J. Freedsman, 2016 .

Drain-current collapse in AlGaN/GaN HEMTs on sapphire and semi-insulating SiC substrates

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2002 .

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Takashi Jimbo, Masayoshi Umeno, Osamu Oda, 2002 .

Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors

Hiroyasu Ishikawa, Takashi Egawa, T. Egawa, 2005 .

Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates

Takashi Jimbo, Masayoshi Umeno, Takashi Egawa, 1995 .

Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures

Hiroyasu Ishikawa, Takashi Egawa, Maosheng Hao, 2004 .

Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation

Yoshiaki Sano, Masahiro Akiyama, Takashi Egawa, 1984 .

High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2003 .

Low Noise and Low Distortion Performances of an AlGaN/GaN HFET

Takashi Jimbo, Kaoru Inoue, Hiroyasu Ishikawa, 2003 .

First Demonstration of AlxGa1-xAs/Si Monolithic Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition

Takashi Jimbo, Tetsuo Soga, Masayoshi Umeno, 1992 .

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 1999 .

Effects of Dislocation and Stress on Characteristics of GaAs-Based Laser Grown on Si by Metalorganic Chemical Vapor Deposition

Takashi Jimbo, Masayoshi Umeno, Takashi Egawa, 1992 .

Structure of AlAs/GaAs distributed Bragg reflector grown on Si substrate by metalorganic chemical vapor deposition

Takashi Jimbo, Masayoshi Umeno, Takashi Egawa, 1995 .

Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Grown by Metalorganic Chemical Vapor Deposition

Hiroyasu Ishikawa, Takashi Egawa, Baijun Zhang, 2004 .

Low‐threshold continuous‐wave room‐temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2 back coating

Takashi Jimbo, Tetsuo Soga, Takashi Egawa, 1990 .

Comparison of electrical properties in GaN grown on Si(1 1 1) and c-sapphire substrate by MOVPE

S. Lawrence Selvaraj, Takashi Egawa, Tsuneo Ito, 2008 .

Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates

Takashi Jimbo, Masayoshi Umeno, Takashi Egawa, 1997 .

GaN MESFETs on [111]Si substrate grown by MOCVD

Hiroyasu Ishikawa, Takashi Egawa, Naoyuki Nakada, 2000 .

On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors

Lawrence Selvaraj, Hiroyasu Ishikawa, Takashi Egawa, 2006 .

Demonstration of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on High-Quality AlN Templates

Yusuke Sakai, Makoto Miyoshi, Takashi Egawa, 2010 .

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2000 .

Influence of Deep Pits on the Breakdown of Metalorganic Chemical Vapor Deposition Grown AlGaN/GaN High Electron Mobility Transistors on Silicon

S. Lawrence Selvaraj, Takashi Egawa, Takaaki Suzue, 2009 .

Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition

Takashi Egawa, Joseph J. Freedsman, T. Egawa, 2016 .

MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 2002 .

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Grown on Epitaxial AlN/Sapphire Templates

Makoto Miyoshi, Takashi Egawa, Tomohiko Shibata, 2008 .

GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2002 .

Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

Takashi Jimbo, Tetsuo Soga, Masayoshi Umeno, 1997 .

Growth of InxGa1−xAs quantum dots by metal–organic chemical vapor deposition on Si substrates and in GaAs-based lasers

Takashi Jimbo, Masayoshi Umeno, Takashi Egawa, 2001 .

Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

Takashi Jimbo, Chunlin Shao, Hiroyasu Ishikawa, 2004 .

Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 1997 .

Low-Dark-Current High-Performance AlGaN Solar-Blind p-i-n Photodiodes

Hao Jiang, Takashi Egawa, Hao Jiang, 2008 .

The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method

Yoshiaki Sano, Takashi Egawa, Katsuzo Kaminishi, 1985 .

Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 2001 .

InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2002 .