Jungwoo Oh

发表

CMOS Scaling For the Next Decade: Trends, Challenges and Opportunities

Hsing-Huang Tseng, Se-Hoon Lee, Raj Jammy, 2008 .

High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility

Injo Ok, Hi-Deok Lee, Jeff Huang, 2010, IEICE Trans. Electron..

Si-based optical receivers

Joe C. Campbell, Jungwoo Oh, Zhihong Huang, 2005, SPIE OPTO.

The process of Indoor Space Combination Network Model based on object oriented CAD data and its application

Jae-Jun Kim, Kyung-Hwan Kim, Byung-Ju Ahn, 2008 .

Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (≫ \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs)

Hsing-Huang Tseng, S. Datta, R. Jammy, 2008, IEEE Electron Device Letters.

Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme

Hsing-Huang Tseng, Byoung Hun Lee, R. Jammy, 2007, 2007 IEEE Symposium on VLSI Technology.

Suppression of Nickel-germanide (NiGe) Agglomeration and NiPenetration by Hydrogen (H) Ion Shower Doping in NiGe on a ThinEpitaxial Ge-on-Si Substrate

Raj Jammy, Ga-Won Lee, Min-Ho Kang, 2009 .

Improvement of Thermal Stability of Ni Germanide Using a Ni–Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs

Hsing-Huang Tseng, Ga-Won Lee, R. Jammy, 2010, IEEE Transactions on Nanotechnology.

Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si Cap and high-k metal gate stacks

Raj Jammy, Y. Akasaka, T. Arikado, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

Sub-60nm Si tunnel field effect transistors with Ion >100 µA/µm

Chang Yong Kang, Hsing-Huang Tseng, Raj Jammy, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained $ \hbox{Si}_{0.5}\hbox{Ge}_{0.5}$ Quantum-Well pMOSFET Along $ \langle \hbox{110} \rangle$ and $\langle \hbox{100} \rangle$ Channel Directions

Leonard Franklin Register, Raj Jammy, Aneesh Nainani, 2011, IEEE Transactions on Electron Devices.

CMOS Scaling Beyond High-k and Metal Gates

Raj Jammy, Prashant Majhi, Jungwoo Oh, 2007 .

CMOS band-edge schottky barrier heights using dielectric-dipole mitigated (DDM) metal/Si for source/drain contact resistance reduction

R. Jammy, Jiyoung Kim, P. Majhi, 2006, 2009 Symposium on VLSI Technology.

Thermal Immune Ni Germanide for High Performance Ge MOSFETs on Ge -on- Si Substrate Utilizing $ \hbox{Ni}_{0.95}\hbox{Pd}_{0.05}$ Alloy

Won-Ho Choi, R. Jammy, Zhun Zhong, 2009 .

on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained Quantum-Well pMOSFET Along and Channel Directions

Raj Jammy, Aneesh Nainani, Prashant Majhi, 2011 .

Low-voltage green transistor using ultra shallow junction and hetero-tunneling

Hsing-Huang Tseng, Chenming Hu, P. Majhi, 2008, Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).

High Mobility SiGe p-Channel Metal?Oxide?Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-k Dielectric and Metal Gate

Chang Yong Kang, Raj Jammy, Takuya Sugawara, 2009 .