Matthew T. Hardy

(Invited) Epitaxial Transition Metal Nitrides for III-Nitride Devices: Application for Epitaxial Lift-Off and Transfer

David J. Meyer, Neeraj Nepal, Travis J. Anderson, 2016 .

Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design

Yu Cao, David J. Meyer, Neeraj Nepal, 2020, 2020 Device Research Conference (DRC).

Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates

James S. Speck, Shuji Nakamura, Robert M. Farrell, 2013 .

Epitaxial Lift-Off and Transfer of III-N Materials and Devices from SiC Substrates

David J. Meyer, Neeraj Nepal, Travis J. Anderson, 2016, IEEE Transactions on Semiconductor Manufacturing.

Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells

James S. Speck, Shuji Nakamura, Matthew T. Hardy, 2011 .

Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes

James S. Speck, Shuji Nakamura, Daniel A. Cohen, 2013 .

True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy

James S. Speck, Shuji Nakamura, Feng Wu, 2013 .

m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching

James S. Speck, Shuji Nakamura, Hiroaki Ohta, 2009 .

High Power Density ScAlN-Based Heterostructure FETs for mm-Wave Applications

David J. Meyer, Thomas E. Kazior, Matthew T. Hardy, 2019, 2019 IEEE MTT-S International Microwave Symposium (IMS).

Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers

James S. Speck, Shuji Nakamura, Alexey E. Romanov, 2012 .