W. Besling

High performance k=2.5 ULK backend solution using an improved TFHM architecture, extendible to the 45nm technology node

V. Arnal, D. Reber, A. Farcy, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Demonstration of an extendable and industrial 300mm BEOL integration for the 65-nm technology node

D. Reber, A. Farcy, C. Cregut, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Integration of multi-level self-aligned CoWP barrier compatible with high performance BEOL

S. Chhun, M. Mellier, S. Jullian, 2006, 2006 International Interconnect Technology Conference.

Manufacturability and Speed Performance Demonstration of Porous ULK (k=2.5) for a 45nm CMOS Platform

M. Haond, P. Ferreira, C. Cregut, 2007, 2007 IEEE Symposium on VLSI Technology.