B. Arnaudov

Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers

B. Arnaudov, D. S. Domanevskii, S. Evtimova, 2009, Microelectron. J..

Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers

B. Arnaudov, Jens Birch, Tanja Paskova, 2005 .