Chikashi Anayama

发表

Improved responsivity at the L-band wavelength of a strain-compensated InGaAs multiple quantum well photodiode

Akira Furuya, Masahiro Kobayashi, Toru Uchida, 2001, ITCom.

An Approach for Versatile Highly-Uniform Movpe Growth - the Flow Controlled Stagnation Point Flow Reactor

Masao Kondo, Akito Kuramata, Chikashi Anayama, 1992 .

Self-aligned bend waveguide (SBW) AlGaInP visible laser diode with small beam astigmatism

Masao Kondo, Akira Furuya, Hisao Sudo, 1993 .

Origin of nonradiative recombination centers in AlGaInP grown by metalorganic vapor phase epitaxy

Makoto Kondo, Kay Domen, Chikashi Anayama, 1994 .

MOVPE growth and optical properties of AlGaInP/GaInP strained single quantum well structures

Kazuo Nakajima, Makoto Kondo, Kay Domen, 1991 .

Simultaneous impurity doping with Zn and Se in AlGaInP by MOVPE

Masao Kondo, Kay Domen, Chikashi Anayama, 1993 .

Crystallographic orientation dependence of impurity incorporation into III‐V compound semiconductors grown by metalorganic vapor phase epitaxy

Makoto Kondo, Kay Domen, Chikashi Anayama, 1994 .

Investigation of Strained GaInAsP Active Layer for AlGaInP Visible Laser

Makoto Kondo, Akira Furuya, Kay Domen, 1993 .

One-Step-MOVPE-Grown Index-Guide GaInP/AlGaInP Visible Laser Using Simultaneous Impurity Doping

Makoto Kondo, Akira Furuya, Hisao Sudo, 1992 .

High‐purity GaSb epitaxial layers grown from Sb‐rich solutions

Haruhiko Kuwatsuka, Chikashi Anayama, Toshiyuki Tanahashi, 1990 .

Alternate doping of p-type and n-type impurities for AlGaInP selfaligned stepped substrate (S3) lasers

Masao Kondo, Akira Furuya, T. Fukushima, 1994 .