Peter J. Parbrook

发表

The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes

Peter Blood, Peter Michael Smowton, Tao Wang, 2005, SPIE OPTO.

Significant contribution from impurity-band transport to the room temperature conductivity of silicon-doped AlGaN

Duc V. Dinh, Vitaly Z. Zubialevich, Peter J. Parbrook, 2018 .

Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells

A. G. Cullis, Peter J. Parbrook, Ian M. Ross, 2003 .

Spatial inhomogeneity investigation of QW emission in InGaN MQW LEDs

Eric C. Larkins, J. Morgan, Peter J. Parbrook, 2002 .

250-nm emitting LED optimized for optical fibre coupling

Peter O'Brien, Brian Corbett, Zhiheng Quan, 2015, 2015 IEEE Summer Topicals Meeting Series (SUM).

Highly improved performance of a 350 nm ultraviolet light-emitting diode containing AlxGa1−xN/AlyGa1−yN distributed Bragg reflectors

Jin-Ping Ao, Tao Wang, Peter J. Parbrook, 2004 .

High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes

Duc V. Dinh, Brian Corbett, Zhiheng Quan, 2016, IEEE Photonics Journal.

Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells

Wenhui Fan, M. S. Skolnick, Jon-Paul R. Wells, 2004 .

GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates

Tao Wang, M. S. Skolnick, Peter J. Parbrook, 2007 .

Comparison of different surface passivation dielectrics in AlGaN/GaN heterostructure field-effect transistors

Peter A. Houston, Peter J. Parbrook, G. Hill, 2002 .

A study of dislocations in AlN and GaN films grown on sapphire substrates

A. G. Cullis, Peter J. Parbrook, Jie Bai, 2005 .

Semipolar (11 2― 2) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates

Frank Brunner, Pleun Maaskant, Duc V. Dinh, 2015 .

AlGaN‐based Bragg mirrors and hybrid microcavities for the ultra‐violet spectral region

Tao Wang, M. S. Skolnick, D. M. Whittaker, 2005 .

InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

Michael Schmidt, Peter J. Parbrook, Donagh O'Mahony, 2015 .

Mechanisms of dislocation reduction in an Al0.98Ga0.02N layer grown using a porous AlN buffer

A. G. Cullis, Peter J. Parbrook, Jie Bai, 2006 .

Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes

Tao Wang, John P. R. David, Jin-Ping Ao, 2005 .

Crack formation and development in AlGaN/GaN structures

R. T. Murray, Peter J. Parbrook, C. N. Harrison, 2003 .

Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors

Peter A. Houston, Peter J. Parbrook, C. R. Whitehouse, 2002 .

Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer

A. G. Cullis, Peter J. Parbrook, Jie Bai, 2007 .

Invited) Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors

Gourab Sabui, Vitaly Z. Zubialevich, Peter J. Parbrook, 2017 .

Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods

Justin D. Holmes, Nikolay Petkov, Vitaly Z. Zubialevich, 2015 .

GaN Cleaning by Ga Deposition, Reduction and Re‐Evaporation: An SXPS Study

Steve P. Wilks, P. R. Dunstan, Francesca Peiró, 1999 .

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Duc V. Dinh, Vitaly Z. Zubialevich, Colin J. Humphreys, 2014 .

The origin of the high ideality factor in AlGaN‐based quantum well ultraviolet light emitting diodes

Tao Wang, Peter J. Parbrook, Jie Bai, 2010 .