Kenji Tsubaki

Development of 260 nm band deep-ultraviolet light emitting diodes on Si substrates

Masakazu Sugiyama, Takayoshi Takano, Hideki Hirayama, 2013, Photonics West - Optoelectronic Materials and Devices.

222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template

Hideki Hirayama, Norihiko Kamata, Sachie Fujikawa, 2009, OPTO.

A process for producing an airgel

Kenji Sonoda, Kenji Tsubaki, Hiroshi Yokogawa, 1997 .

Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

Takayoshi Takano, Takuya Mino, Kenji Tsubaki, 2017 .

222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire

Norihiko Kamata, Sachie Fujikawa, Takayoshi Takano, 2009 .

High Efficiency Blue Organic Electroluminescent Devices Having a Metal-Doped Electron Injection Layer

Junji Kido, Kenji Tsubaki, Yasuhisa Kishigami, 2005 .

AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Norihiko Kamata, Kenji Tsubaki, Hideki Hirayama, 2017 .