Pierre Morin

发表

A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

Pierre Morin, Sylvain Maitrejean, Frederic Allibert, 2016 .

Highly Manufacturable and Cost-effective Single TaxC / HfxZr(1-x)O2 Gate CMOS Bulk Platform for LP Applications at the 45nm Node and Beyond

Pierre Morin, C. Laviron, G. Ribes, 2007 .

Method and apparatus for about wear of information via cable and via spuelungsdruckwellen.

Pierre Morin, Jacques Lessi, 1989 .

High-Resolution 1H NMR Micro spectroscopy using an Implantable Micro-coil

Pierre Morin, André Briguet, Adrian Rengle, 2006, 2006 13th IEEE International Conference on Electronics, Circuits and Systems.

Method and the information transmission device by cable and by mud waves

Pierre Morin, Jacques Lessi, 1988 .

Connection system enabling at least one connection to be made inside a pipe element

Pierre Morin, Andre Chevalier, Michel Chardin, 1986 .

Preparation and Execution of the GAP Surface Tow

Pierre Morin, Yann Helle, Philippe Jean, 2008 .

Mechanisms of stress generation within a polysilicon gate for nMOSFET performance enhancement

Pierre Morin, C. Ortolland, Franck Arnaud, 2006 .

Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs

Pierre Morin, Frederic Allibert, Nicolas Loubet, 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Simulation of the sub-melt laser anneal process in 45 CMOS technology—Application to the thermal pattern effects

Pierre Morin, M. Bidaud, Daniel Mathiot, 2008 .

(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations

Pierre Morin, Ali Khakifirooz, Bruce B. Doris, 2014 .

Mobility Enhancement by Strained Nitride Liners for 65nm CMOS Logic Design Features

Pierre Morin, S. Orain, C. Ortolland, 2006 .

A comparison of the mechanical stability of silicon nitride films deposited with various techniques

Pierre Morin, Daniel Benoit, Remi Beneyton, 2012 .

Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensors

Pierre Morin, Daniel Benoit, Jorge Regolini, 2007 .

Mechanical Analyses of Extended and Localized UTBB Stressors Formed with Ge Enrichment Techniques

Pierre Morin, Sylvain Maitrejean, Emmanuel Augendre, 2015 .

A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration

Pierre Morin, Sylvain Maitrejean, Nicolas Loubet, 2015 .

Macroscopic and nanometer scale stress measurement of Ni(Pt)Si silicide: Impact of thermal treatments ranging from millisecond to several hours

Pierre Morin, A. Pofelski, Shankar Muthukrishnan, 2014 .

Simulation of pattern effect induced by millisecond annealing used in advanced metal-oxide-semiconductor technologies

Pierre Morin, Florian Cacho, B. Dumont, 2010 .

Effects of Silicon Nitride Passivation Layer on Mean Dark Current and Quantum Efficiency of CMOS Active Pixel Sensors

Pierre Morin, Daniel Benoit, Jorge Regolini, 2005 .