Emmanuel Augendre

发表

A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

Pierre Morin, Sylvain Maitrejean, Frederic Allibert, 2016 .

High-k/metal Gate GeOI pMOSFET: Validation of the Lim&Fossum model for interface trap density extraction

X. Garros, Emmanuel Augendre, M. Vinet, 2008 .

An analysis of stress evolution in stacked GAA transistors

Sylvain Maitrejean, Emmanuel Augendre, Nicolas Loubet, 2016, 2016 IEEE Silicon Nanoelectronics Workshop (SNW).

Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction

Emmanuel Augendre, Sorin Cristoloveanu, C. Le Royer, 2010 .

Investigation of 1/f noise in germanium-on-insulator 0.12 μm PMOS transistors from weak to strong inversion

Emmanuel Augendre, K. Romanjek, M. Valenza, 2009 .

Improved GeOI substrates for pMOSFET off-state leakage control

Emmanuel Augendre, Sorin Cristoloveanu, Eric Guiot, 2009 .

Wafer Level High-Speed Germanium Photodiode Array Integration

Emmanuel Augendre, Maryse Fournier, Jean-Michel Hartmann, 2011, IEEE Journal of Selected Topics in Quantum Electronics.

Photonic–Electronic Integration With Bonding

Emmanuel Augendre, Jochen Kraft, Stephane Bernabe, 2014, IEEE Journal of Selected Topics in Quantum Electronics.

Mechanical Analyses of Extended and Localized UTBB Stressors Formed with Ge Enrichment Techniques

Pierre Morin, Sylvain Maitrejean, Emmanuel Augendre, 2015 .

Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band

Emmanuel Augendre, Yasuhiko Arakawa, Laurent Clavelier, 2010 .

Advanced pMOSFET on germanium-on-insulator : low temperature properties.

Emmanuel Augendre, Sorin Cristoloveanu, Laurent Clavelier, 2009 .

Short-channel radiation effect in 60 MeV proton irradiated 0.13 /spl mu/m CMOS transistors

Emmanuel Augendre, Eddy Simoen, C. Claeys, 2003 .

Direct and Polymer Bonding of III-V to Processed Silicon-On-Insulator for Hybrid Silicon Evanescent Lasers Fabrication

Emmanuel Augendre, Maxime Argoud, Julie Harduin, 2010 .

Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration

Emmanuel Augendre, Maud Vinet, Sorin Cristoloveanu, 2009 .

Gate-source-drain architecture impact on DC and RF performance of sub-100-nm elevated source/drain NMOS transistors

Emmanuel Augendre, Dimitri Linten, Rita Rooyackers, 2003 .

Comparison of the radiation behavior of 65 nm fully depleted Silicon-on-Insulator MOSFETs employing different tensile-strain-inducing techniques

Paul Leroux, Emmanuel Augendre, Eddy Simoen, 2006 .

High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate

X. Garros, G. Reimbold, Emmanuel Augendre, 2009 .

Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: Process window versus complexity

Emmanuel Augendre, Rita Rooyackers, E. P. Vandamme, 2000 .

Enhancement of photoluminescence from germanium by utilizing air-bridge-type photonic crystal slab

Emmanuel Augendre, Yasuhiko Arakawa, Satomi Ishida, 2010 .