Nicolas Loubet

发表

A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

Pierre Morin, Sylvain Maitrejean, Frederic Allibert, 2016 .

Thin-film devices for low power applications

Nicolas Loubet, Stephane Monfray, Claire Fenouillet-Beranger, 2010 .

Ultra-Thin Body and BOX (UTBB) Device for Aggressive Scaling of CMOS Technology

Nicolas Loubet, Ali Khakifirooz, Maud Vinet, 2011 .

An analysis of stress evolution in stacked GAA transistors

Sylvain Maitrejean, Emmanuel Augendre, Nicolas Loubet, 2016, 2016 IEEE Silicon Nanoelectronics Workshop (SNW).

Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs

Frederic Allibert, Nicolas Loubet, Ali Khakifirooz, 2013, IEEE Electron Device Letters.

Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications

Nicolas Loubet, Stephane Monfray, G. Bidal, 2010 .

Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet

Nicolas Loubet, Tenko Yamashita, Miaomiao Wang, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs

Pierre Morin, Frederic Allibert, Nicolas Loubet, 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Facet Propagation in Si(Ge) Epitaxy or Etching

Nicolas Loubet, Alexandre Talbot, Didier Dutartre, 2006 .

Selective etching of Si1 − xGex versus Si with gaseous HCl for the formation of advanced CMOS devices

Nicolas Loubet, Stephane Denorme, Didier Dutartre, 2008 .

Mechanical Analyses of Extended and Localized UTBB Stressors Formed with Ge Enrichment Techniques

Pierre Morin, Sylvain Maitrejean, Emmanuel Augendre, 2015 .

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

O. Faynot, Nicolas Loubet, Shay Reboh, 2018 .

A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration

Pierre Morin, Sylvain Maitrejean, Nicolas Loubet, 2015 .

A Breakthrough Electronic Lithography Process Through Si Layer for Self Aligning Gates in Planar Double-Gate Transistors for 32nm Node And Below

Nicolas Loubet, Romain Wacquez, M.-P. Samson, 2007 .

High-k metal gate fundamental learning and multi-Vt options for stacked nanosheet gate-all-around transistor

Nicolas Loubet, Tenko Yamashita, Sivananda Kanakasabapathy, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Si1-xGex/Si Selective Etch with HCl for Thin Si-Channel Transistors Integration

Nicolas Loubet, Stephane Denorme, Thomas Skotnicki, 2007 .

Silicon-Germanium (SiGe) composition and thickness determination via simultaneous smallspot XPS and XRF measurements

Nicolas Loubet, Romain Wacquez, John Gaudiello, 2014, 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).

Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices

Nicolas Loubet, Bruce B. Doris, Walter Kleemeier, 2012 .

A Novel Self Aligned Design Adapted Gate All Around (SADAGAA) MOSFET including two stacked Channels : A High Co-Integration Potential

Nicolas Loubet, Romain Wacquez, M.-P. Samson, 2006 .

Facet Propagation in Si and SiGe Epitaxy or Etching

Nicolas Loubet, Alexandre Talbot, Didier Dutartre, 2006 .